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Fabrication of high-density cantilever arrays and through-wafer interconnects
Processes to fabricate dense, dry released microstructures with electrical connections on the opposite side of the wafer are described. A 10 x 10 array of silicon and polysilicon cantilevers with high packing density (5 tips/mm2) and high uniformity (6/C4F8, plasma etch followed by a HBr plasma etch to accurately release cantilevers. A process for fabricating electrical contacts through the backside of the wafer is also described. Electrodeposited resist, conformal CVD metal deposition and deep SF6/C4F8 plasma etching are used to make 30 µm/side square vias each of which has a resistance of 50 m(omega)