Test schedules for VLSI circuits having built-in test hardware

AbstractNumerous built-in test techniques exist for testing structures within a VLSI chip. In general these techniques deal with a repeated application of the following steps: (1) generate a test vector; (2) transmit it to the structure being tested; (3) process the test through the structure; (4) obtain the response from the structure; and (5) process the response. These steps constitute a test schema. Because these steps must be repeated for each test vector, it is possible that steps in processing one test vector can overlap those used in processing another vector. The manner of overlapping this testing process leads to the concept of a test schedule. In this paper we first present a model for built-in test techniques and for describing test schemas and schedules. We introduce the new concept of an I-path which is used to transfer data from one place in a circuit to another, without modifying the data. Finally results are presented describing how to create test schedules that minimizes the total testing time. Lower bounds on the minimal test time are also derived

Technology and layout-related testing of static random-access memories

Static random-access memories (SRAMs) exhibit faults that are electrical in nature. Functional and electrical testing are performed to diagnose faulty operation. These tests are usually designed from simple fault models that describe the chip interface behavior without a thorough analysis of the chip layout and technology. However, there are certain technology and layout-related defects that are internal to the chip and are mostly time-dependent in nature. The resulting failures may or may not seriously degrade the input/output interface behavior. They may show up as electrical faults (such as a slow access fault) and/or functional faults (such as a pattern sensitive fault). However, these faults cannot be described properly with the functional fault models because these models do not take timing into account. Also, electrical fault models that describe merely the input/output interface behavior are inadequate to characterize every possible defect in the basic SRAM cell. Examples of faults produced by these defects are: (a) static data loss, (b) abnormally high currents drawn from the power supply, etc. Generating tests for such faults often requires a thorough understanding and analysis of the circuit technology and layout. In this article, we shall examine ways to characterize and test such faults. We shall divide such faults into two categories depending on the types of SRAMs they effect—silicon SRAMs and GaAs SRAMs.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/43015/1/10836_2004_Article_BF00972519.pd