6 research outputs found
Electric-field tuning of the valley splitting in silicon corner dots
We perform an excited state spectroscopy analysis of a silicon corner dot in
a nanowire field-effect transistor to assess the electric field tunability of
the valley splitting. First, we demonstrate a back-gate-controlled transition
between a single quantum dot and a double quantum dot in parallel that allows
tuning the device in to corner dot formation. We find a linear dependence of
the valley splitting on back-gate voltage, from to with a slope of (or equivalently a slope
of with respect to the effective field). The
experimental results are backed up by tight-binding simulations that include
the effect of surface roughness, remote charges in the gate stack and discrete
dopants in the channel. Our results demonstrate a way to electrically tune the
valley splitting in silicon-on-insulator-based quantum dots, a requirement to
achieve all-electrical manipulation of silicon spin qubits.Comment: 5 pages, 3 figures. In this version: Discussion of model expanded;
Fig. 3 updated; Refs. added (15, 22, 32, 34, 35, 36, 37
Strong coupling between a photon and a hole spin in silicon
Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible MOS fabrication process. By leveraging the strong spin-orbit interaction intrinsically present in the valence band of silicon, we achieve a spin-photon coupling rate as high as 330 MHz largely exceeding the combined spin-photon decoherence rate. This result, together with the recently demonstrated long coherence of hole spins in silicon, opens a new realistic pathway to the development of circuit quantum electrodynamics with spins in semiconductor quantum dots
Strong coupling between a photon and a hole spin in silicon
Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible MOS fabrication process. By leveraging the strong spin-orbit interaction intrinsically present in the valence band of silicon, we achieve a spin-photon coupling rate as high as 330 MHz largely exceeding the combined spin-photon decoherence rate. This result, together with the recently demonstrated long coherence of hole spins in silicon, opens a new realistic pathway to the development of circuit quantum electrodynamics with spins in semiconductor quantum dots
Non-symmetric Pauli spin blockade in a silicon double quantum dot
Abstract Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however, various mechanisms may lift PSB and complicate readout. In this work, we present an experimental study of PSB in a multi-electron low-symmetry double quantum dot (DQD) in silicon nanowires. We report on the observation of non-symmetric PSB, manifesting as blockaded tunneling when the spin is projected to one QD of the pair but as allowed tunneling when the projection is done into the other. By analyzing the interaction of the DQD with a readout resonator, we find that PSB lifting is caused by a large coupling between the different electron spin manifolds of 7.90 μeV and that tunneling is incoherent. Further, magnetospectroscopy of the DQD in 16 charge configurations, enables reconstructing the energy spectrum of the DQD and reveals the lifting mechanism is energy-level selective. Our results indicate enhanced spin-orbit coupling which may enable all-electrical qubit control of electron spins in silicon nanowires
Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental observation of a new, highly prevalent PSB-lifting mechanism in a silicon double quantum dot due to incoherent tunneling between different spin manifolds. Through dispersively-detected magnetospectroscopy of the double quantum dot in 16 charge configurations, we find the mechanism to be energy-level selective and non-reciprocal for neighbouring charge configurations. Additionally, using input-output theory we report a large coupling of different electron spin manifolds of 7.90 eV, the largest reported to date, indicating an enhanced spin-orbit coupling which may enable all-electrical qubit control