Kondo physics in tunable semiconductor nanowire quantum dots

We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can be tuned by changing the potential on a gate electrode, and for increasing transparencies the effects dominating the transport changes from Coulomb Blockade to Universal Conductance Fluctuations with Kondo physics appearing in the intermediate region.Comment: 4 pages, 4 figure

Single nanowire solar cells beyond the Shockley-Queisser limit

Light management is of great importance to photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal pn-junction combined with an optimal light absorption can lead to a solar cell efficiency above the Shockley-Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core-shell p-i-n junction GaAs nanowire solar cell grown on a silicon substrate. At one sun illumination a short circuit current of 180 mA/cm^2 is obtained, which is more than one order of magnitude higher than what would be predicted from Lambert-Beer law. The enhanced light absorption is shown to be due to a light concentrating property of the standing nanowire as shown by photocurrent maps of the device. The results imply new limits for the maximum efficiency obtainable with III-V based nanowire solar cells under one sun illumination.Comment: 19 pages, 3 figure

Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices

Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminium heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. We present a crystal growth platform -- based on three-dimensional structuring of growth substrates -- which enables synthesis of semiconductor nanowire hybrids with in-situ patterned superconductor shells. This platform eliminates the need for etching, thereby enabling full freedom in choice of hybrid constituents. We realise and characterise all the most frequently used architectures in superconducting hybrid devices, finding increased yield and electrostatic stability compared to etched devices, along with evidence of ballistic superconductivity. In addition to aluminium, we present hybrid devices based on tantalum, niobium and vanadium. This is the submitted version of the manuscript. The accepted, peer reviewed version is available from Advanced Materials: http://doi.org/10.1002/adma.201908411 Previous title: Shadow lithography for in-situ growth of generic semiconductor/superconductor device

Advances in the theory of III-V Nanowire Growth Dynamics

Nanowire (NW) crystal growth via the vapour_liquid_solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III_V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.Comment: 63 pages, 25 figures and 4 tables. Some details are explained more carefully in this version aswell as a new figure is added illustrating various facets of a WZ crysta

Ten-fold enhancement of InAs nanowire photoluminescence emission with an InP passivation layer

In this letter, we demonstrate that a significant improvement of optical performance of InAs nanowires can be achieved by capping the core InAs nanowires with a thin InP shell, which successfully passivates the surface states reducing the rate of non-radiative recombination. The improvements have been confirmed by detailed photoluminescence measurements, which showed up to ten-fold increase in the intensity of room-temperature photoluminescence from the capped InAs/InP nanowires compared to the sample with core-only InAs nanowires. Moreover, the nanowires exhibit high stability of total photoluminescence emission strength across temperature range from 10 to 300 K as a result of strong quantum confinement. These findings could be the key to successful implementation of InAs nanowires into optoelectronic devices

Growth of Pure Zinc-Blende GaAs(P) Core-Shell Nanowires with Highly Regular Morphology

The growth of self-catalyzed core–shell nanowires (NWs) is investigated systematically using GaAs(P) NWs. The defects in the core NW are found to be detrimental for the shell growth. These defects are effectively eliminated by introducing beryllium (Be) doping during the NW core growth and hence forming Be–Ga alloy droplets that can effectively suppress the WZ nucleation and facilitate the droplet consumption. Shells with pure zinc-blende crystal quality and highly regular morphology are successfully grown on the defect-free NW cores and demonstrated an enhancement of one order of magnitude for room-temperature emission compared to that of the defective shells. These results provide useful information on guiding the growth of high-quality shell, which can greatly enhance the NW device performance

Droplet manipulation and horizontal growth of high-quality self-catalysed GaAsP nanowires

Self-catalyzed horizontal nanowires (NWs) can greatly simplify the CMOS integration processing compared with the regular vertical counterparts. However, self-catalyzed growth mode poses challenges in manipulating the droplets to produce single-crystalline horizontal NWs with a uniform diameter. Here, we demonstrated a novel method to manipulate the droplet through altering the droplet surface energy. Ga-droplet was successfully moved from top to sidewalls in GaAsP NWs by introducing Be and lowering the surface energy, and pinned at the tip despite the absence of planar defects. This can switch the growth direction, with a successful rate of 100 %, from vertical to horizontal through the assistance of few sparse twins. The produced NWs tend to be bounded by low energy facets, which leads to the self-catalysed growth of horizontal NWs with a greatly improved diameter uniformity along the axis. Besides, the lowered surface energy can effectively suppress the wurtzite nucleation, producing pure zinc blende single-crystalline horizontal NWs. This study establishes an essential step toward the efficient integration of NWs into CMOS compatible devices

Kondo-enhanced Andreev tunneling in InAs nanowire quantum dots

We report measurements of the nonlinear conductance of InAs nanowire quantum dots coupled to superconducting leads. We observe a clear alternation between odd and even occupation of the dot, with sub-gap-peaks at $|V_{sd}|=\Delta/e$ markedly stronger(weaker) than the quasiparticle tunneling peaks at $|V_{sd}|=2\Delta/e$ for odd(even) occupation. We attribute the enhanced $\Delta$-peak to an interplay between Kondo-correlations and Andreev tunneling in dots with an odd number of spins, and substantiate this interpretation by a poor man's scaling analysis