5 research outputs found

    Development of a Reference Wafer for On-Wafer Testing of Extreme Impedance Devices

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    This paper describes the design, fabrication, and testing of an on-wafer substrate that has been developed specifically for measuring extreme impedance devices using an on-wafer probe station. Such devices include carbon nano-tubes (CNTs) and structures based on graphene which possess impedances in the κ Ω range and are generally realised on the nano-scale rather than the micro-scale that is used for conventional on-wafer measurement. These impedances are far removed from the conventional 50- reference impedance of the test equipment. The on-wafer substrate includes methods for transforming from the micro-scale towards the nano-scale and reference standards to enable calibrations for extreme impedance devices. The paper includes typical results obtained from the designed wafer

    On the development of CAD techniques suitable for the design of high-power RF transistors

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    A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors

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