Spins go their own way

A semiconductor device that integrates electron spin injection, transport, modulation and detection in a single structure provides an important step in versatility for both fundamental research and practical spintronic applications

Electronic measurement and control of spin transport in Silicon

The electron spin lifetime and diffusion length are transport parameters that define the scale of coherence in spintronic devices and circuits. Since these parameters are many orders of magnitude larger in semiconductors than in metals, semiconductors could be the most suitable for spintronics. Thus far, spin transport has only been measured in direct-bandgap semiconductors or in combination with magnetic semiconductors, excluding a wide range of non-magnetic semiconductors with indirect bandgaps. Most notable in this group is silicon (Si), which (in addition to its market entrenchment in electronics) has long been predicted a superior semiconductor for spintronics with enhanced lifetime and diffusion length due to low spin-orbit scattering and lattice inversion symmetry. Despite its exciting promise, a demonstration of coherent spin transport in Si has remained elusive, because most experiments focused on magnetoresistive devices; these methods fail because of universal impedance mismatch obstacles, and are obscured by Lorentz magnetoresistance and Hall effects. Here we demonstrate conduction band spin transport across 10 microns undoped Si, by using spin-dependent ballistic hot-electron filtering through ferromagnetic thin films for both spin-injection and detection. Not based on magnetoresistance, the hot electron spin-injection and detection avoids impedance mismatch issues and prevents interference from parasitic effects. The clean collector current thus shows independent magnetic and electrical control of spin precession and confirms spin coherent drift in the conduction band of silicon.Comment: Single PDF file with 4 Figure

Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves

The integration of magnetic materials with semiconductors will lead to the development of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both data storage and processing. While the fabrication and transport studies of lateral SFET have attracted greatly attentions, there are only few studies of vertical devices, which may offer the opportunity for the future three-dimensional integration. Here, we provide evidence of two-terminal electrical spin injection and detection in Fe/GaAs/Fe vertical spin-valves (SVs) with the GaAs layer of 50 nanometers thick and top and bottom Fe electrodes deposited by molecular beam epitaxy. The spin-valve effect, which corresponds to the individual switching of the top and bottom Fe layers, is bias dependent and observed up to 20 K. We propose that the strongly bias-and temperature-dependent MR is associated with spin transport at the interfacial Fe/GaAs Schottky contacts and in the GaAs membranes, where balance between the barrier profiles as well as the dwell time to spin lifetime ratio are crucial factors for determining the device operations. The demonstration of the fabrication and spin injection in the vertical SV with a semiconductor interlayer is expected to open a new avenue in exploring the SFET

Semiconductor spintronics - Spins go their own way

A semiconductor device that integrates electron spin injection, transport, modulation and detection in a single structure provides an important step in versatility for both fundamental research and practical spintronic applications