How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: the case of InAs/GaAs(001)

The two- to three-dimensional growth transition in the InAs/GaAs(001) heterostructure has been investigated by atomic force microscopy. The kinetics of the density of three dimensional quantum dots evidences two transition thresholds at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large. Based on the scaling analysis, such families are characterized by different mechanisms of aggregation, involving the change of the critical nucleus size. Remarkably, the small ones give rise to a wealth of "monomers" through the erosion of the step edges, favoring the explosive nucleation of the large ones.Comment: 10 pages, 3 figures. Submitted to Phys. Rev. Let

Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys

In this paper, we present results obtained by an optical technique, namely, reflectance anisotropy spectroscopy (RAS), applied to a series of GaAs1-xBix samples grown by molecular beam epitaxy (MBE) under different strain conditions with the increasing concentration of Bi, up to the higher value of about 7%. The epitaxial buffer layers for the growing GaAs1-xBix layer were prepared with either a compressive strain (as it is commonly done) or a tensile strain: The latter case has been proven to be a strategy that allows us to obtain a better crystalline quality [Tisbi et al., Phys. Rev. Appl. 14, 014028 (2020)]. A characteristic, well defined anisotropy signal below 2.5 eV is demonstrated to be connected to the presence of Bi and, in particular, to the strain produced in the sub-surface region by the voluminous Bi atoms. The amplitude of this signal directly relates to the Bi quantity, while its sign gives information about the local clustering/ordering of Bi atoms in the grown sample. We conclude that the detailed interpretation of RAS signatures and the knowledge of their origin offer the opportunity to utilize this technique to follow in real time the GaAsBi growth either in MBE or in metal organic vapor phase epitaxy processes

Peripheral neurological disturbances, autonomic dysfunction, and antineuronal antibodies in adult celiac disease before and after a gluten-free diet

Thirty-two consecutive adult celiac disease (CD) patients (pts), complaining of peripheral neuropathy (12 pts), autonomic dysfunction (17 pts), or both (3 pts), were evaluated to assess the presence of neurological damage (by clinical neurological evaluation and electrophysiological study) and antineuronal antibodies and to assess the effect of a gluten-free diet (GFD) on the course of the neurological symptoms and on antineuronal antibodies. At entry, 12 of 32 (38%) pts showed signs and symptoms of neurological damage: 7 of 12 (58%), peripheral neurological damage; 3 of 12 (25%), autonomic dysfunction; and 2 (17%), both peripheral neurological damage and autonomic dysfunction. The overall TNS score was 105 at entry. Anti-GM1 antibodies were present in 5 of 12 (42%) pts: 3 showed peripheral neurological damage and 2 showed both peripheral neurological damage and autonomic dysfunction. One year after the GFD was started, histological lesions were still present in only 10 of 12 (83%) pts. TNS score was 99, 98, 98, and 101 at the 3rd, 6th, 9th, and 12th month after the GFD was started, so it did not improve throughout the follow-up. None of the pts showed disappearance of antineuronal antibodies throughout the follow-up. We conclude that adult CD patients may show neurological damage and presence of antineuronal antibodies. Unfortunately, these findings do not disappear with a GFD

Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures

GeSbTe-based materials exhibit multiple crystalline phases, from disordered rocksalt, to rocksalt with ordered vacancy layers, and to the stable trigonal phase. In this paper we investigate the role of the interfaces on the structural and electrical properties of Ge2Sb2Te5. We find that the site of nucleation of the metastable rocksalt phase is crucial in determining the evolution towards vacancy ordering and the stable phase. By properly choosing the substrate and the capping layers, nucleation sites engineering can be obtained, thus promoting or preventing the vacancy ordering in the rocksalt structure or the conversion into the trigonal phase. The vacancy ordering occurs at lower annealing temperatures (170 °C) for films deposited in the amorphous phase on silicon (111), compared to the case of SiO2 substrate (200 °C), or in presence of a capping layer (330 °C). The mechanisms governing the nucleation have been explained in terms of interfacial energies. Resistance variations of about one order of magnitude have been measured upon transition from the disordered to the ordered rocksalt structure and then to the trigonal phase. The possibility to control the formation of the crystalline phases characterized by marked resistivity contrast is of fundamental relevance for the development of multilevel phase change data storage

Metal - Insulator transition driven by vacancy ordering in GeSbTe phase change materials

Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows

Temperature dependent Neel wall dynamics in GaMnAs/GaAs

Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature magnetic charging of domain walls is observed and nucleation rates depend on the Hall-geometry with respect to the crystal axes. Above a critical temperature where a biaxial-to-uniaxial anisotropy transition occurs a drastic increase of nucleation events is observed. Below this temperature, the nucleation of domains tends to be rather insensitive to temperature. This first spatially resolved study of domain wall dynamics in patterned GaMnAs at variable temperatures has important implications for potential single domain magneto-logic devices made from ferromagnetic semiconductors.Comment: Figures 2 and 6 not correctly TeXifie

The yield of air fluorescence induced by electrons

The fluorescence yield for dry air and pure nitrogen excited by electrons is calculated using a combination of well-established molecular properties and experimental data of the involved cross sections. Particular attention has been paid to the role of secondary electrons from ionization processes. At high pressure and high energy, observed fluorescence turns out to be proportional to the ionization cross section which follows the Born-Bethe law. Predictions on fluorescence yields in a very wide interval of electron energies (eV - GeV) and pressures (1 and 1013 hPa) as expected from laboratory measurements are presented. Experimental results at energies over 1 MeV are in very good agreement with our calculations for pure nitrogen while discrepancies of about 20% are found for dry air, very likely associated to uncertainties in the available data on quenching cross sections. The relationship between fluorescence emission, stopping power and deposited energy is discussed.Comment: 27 pages, 12 figures, 64 references. Accepted in Astroparticle Physic