23 research outputs found
Si solid-state quantum dot-based materials for tandem solar cells
The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabricate tandem cells using thin-film deposition that can optimise collection of energy in a series of cells with decreasing band gap stacked on top of each other. Quantum dot materials, in which Si quantum dots (QDs) are embedded in a dielectric matrix, offer the potential to tune the effective band gap, through quantum confinement, and allow fabrication of optimised tandem solar cell devices in one growth run in a thin-film process. Such cells can be fabricated by sputtering of thin layers of silicon rich oxide sandwiched between a stoichiometric oxide that on annealing crystallise to form Si QDs of uniform and controllable size. For approximately 2-nm diameter QDs, these result in an effective band gap of 1.8 eV. Introduction of phosphorous or boron during the growth of the multilayers results in doping and a rectifying junction, which demonstrates photovoltaic behaviour with an open circuit voltage (VOC) of almost 500 mV. However, the doping behaviour of P and B in these QD materials is not well understood. A modified modulation doping model for the doping mechanisms in these materials is discussed which relies on doping of a sub-oxide region around the Si QDs
A quantum spin transducer based on nano electro-mechancial resonator arrays
Implementation of quantum information processing faces the contradicting
requirements of combining excellent isolation to avoid decoherence with the
ability to control coherent interactions in a many-body quantum system. For
example, spin degrees of freedom of electrons and nuclei provide a good quantum
memory due to their weak magnetic interactions with the environment. However,
for the same reason it is difficult to achieve controlled entanglement of spins
over distances larger than tens of nanometers. Here we propose a universal
realization of a quantum data bus for electronic spin qubits where spins are
coupled to the motion of magnetized mechanical resonators via magnetic field
gradients. Provided that the mechanical system is charged, the magnetic moments
associated with spin qubits can be effectively amplified to enable a coherent
spin-spin coupling over long distances via Coulomb forces. Our approach is
applicable to a wide class of electronic spin qubits which can be localized
near the magnetized tips and can be used for the implementation of hybrid
quantum computing architectures
Solid state quantum memory using the 31P nuclear spin
The transfer of information between different physical forms is a central
theme in communication and computation, for example between processing entities
and memory. Nowhere is this more crucial than in quantum computation, where
great effort must be taken to protect the integrity of a fragile quantum bit.
Nuclear spins are known to benefit from long coherence times compared to
electron spins, but are slow to manipulate and suffer from weak thermal
polarisation. A powerful model for quantum computation is thus one in which
electron spins are used for processing and readout while nuclear spins are used
for storage. Here we demonstrate the coherent transfer of a superposition state
in an electron spin 'processing' qubit to a nuclear spin 'memory' qubit, using
a combination of microwave and radiofrequency pulses applied to 31P donors in
an isotopically pure 28Si crystal. The electron spin state can be stored in the
nuclear spin on a timescale that is long compared with the electron decoherence
time and then coherently transferred back to the electron spin, thus
demonstrating the 31P nuclear spin as a solid-state quantum memory. The overall
store/readout fidelity is about 90%, attributed to systematic imperfections in
radiofrequency pulses which can be improved through the use of composite
pulses. We apply dynamic decoupling to protect the nuclear spin quantum memory
element from sources of decoherence. The coherence lifetime of the quantum
memory element is found to exceed one second at 5.5K.Comment: v2: Tomography added and storage of general initial state
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
The ability to build structures with atomic precision is one of the defining features of nanotechnology. Achieving true atomic- level functionality, however, requires the ability to control the wavefunctions of individual atoms. Here, we investigate an approach that could enable just that. By collecting and analysing transport spectra of a single donor atom in the channel of a silicon FinFET, we present experimental evidence for the emergence of a new type of hybrid molecule system. Our experiments and simulations suggest that the transistor\u27s gate potential can be used to control the degree of hybridization of a single electron donor state between the nuclear potential of its donor atom and a nearby quantum well. Moreover, our theoretical analysis enables us to determine the species of donor (arsenic) implanted into each device as well as the degree of confinement imposed by the gate