15 research outputs found

    Simulation of High Conversion Efficiency and Open-circuit Voltages Of {\alpha}-si/poly-silicon Solar Cell

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    The P+ {\alpha}-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of N+ poly-silicon, we consider the impurity concentration in the N+ poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N+ poly-silicon has little impact on the device when the thickness varies from 20 {\mu}m to 300 {\mu}m. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltage (Voc) of P+ {\alpha}-Si /N+ polycrystalline solar cell is very high, reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P+ {\alpha}-Si/N+ poly-silicon is significant in exploring the high efficiency poly-silicon solar cell.Comment: 8 pages 6figures, 1 table

    Special electronic structures and quantum conduction of B/P co-doping carbon nanotubes under electric field using the first principle

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    Boron (B)/phosphorus (P) doped single wall carbon nanotubes (B-PSWNTs) are studied by using the First- Principle method based on density function theory (DFT). Mayer bond order, band structure, electrons density and density of states are calculated. It concludes that the B-PSWNTs have special band structure which is quite different from BN nanotubes, and that metallic carbon nanotubes will be converted to semiconductor due to boron/phosphorus co-doping which breaks the symmetrical structure. The bonding forms in B-PSWNTs are investigated in detail. Besides, Mulliken charge population and the quantum conductance are also calculated to study the quantum transport characteristics of B-PSWNT hetero-junction. It is found that the position of p-n junction in this hetero-junction will be changed as the applied electric field increase and it performs the characteristics of diode.Comment: 11 pages, 6 fiugres, 2 table
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