Associations of Type 2 Diabetes with Common Variants in PPARD and the Modifying Effect of Vitamin D among Middle-Aged and Elderly Chinese

BACKGROUND: Previous studies have identified that variants in peroxisome proliferator-activated receptor PPAR-δ (PPARD), a target gene of vitamin D, were significantly associated with fasting glucose and insulin sensitivity in European populations. This current study sought to determine (1) whether the genetic associations of PPARD variants with type 2 diabetes and its related traits could be replicated in Chinese Han population, and (2) whether the associations would be modified by the effect of vitamin D status. METHODS AND FINDINGS: We genotyped 9 tag single nucleotide polymorphisms (SNPs) that cover the gene of PPARD (rs2267664, rs6902123, rs3798343, rs2267665, rs2267668, rs2016520, rs2299869, rs1053049, and rs9658056) and tested their associations with type 2 diabetes risk and its related traits, including fasting glucose, insulin and HbA1c in 3,210 Chinese Hans. Among the 9 PPARD tag SNPs, rs6902123 was significantly associated with risk of type 2 diabetes (odds ratio 1.75 [95%CI 1.22-2.53]; P = 0.0025) and combined type 2 diabetes and impaired fasting glucose (IFG) (odds ratio 1.47 [95%CI 1.12-1.92]; P = 0.0054). The minor C allele of rs6902123 was associated with increased levels of fasting glucose (P = 0.0316) and HbA1c (P = 0.0180). In addition, we observed that vitamin D modified the effect of rs6902123 on HbA1c (P for interaction = 0.0347). CONCLUSIONS/SIGNIFICANCE: Our findings demonstrate that common variants in PPARD contribute to the risk of type 2 diabetes in Chinese Hans, and provided suggestive evidence of interaction between 25(OH)D levels and PPARD-rs6902123 on HbA1c

Candidate target genes for loss of heterozygosity on human chromosome 17q21

Loss of heterozygosity (LOH) on chromosome 17q21 has been detected in 30% of primary human breast tumours. The smallest common region deleted occurred in an interval between the D17S746 and D17S846 polymorphic sequences tagged sites that are located on two recombinant PI-bacteriophage clones of chromosome 17q21: 122F4 and 50H1, respectively. To identify the target gene for LOH, we defined a map of this chromosomal region. We found the following genes: JUP, FK506BP10, SC65, Gastrin (GAS) and HAP1. Of the genes that have been identified in this study, only JUP is located between D17S746 and D17S846. This was of interest since earlier studies have shown that JUP expression is altered in breast, lung and thyroid tumours as well as cell lines having LOH in chromosome 17q21. However, no mutations were detected in JUP using single-strand conformation polymorphism analysis of primary breast tumour DNAs having LOH at 17q21. We could find no evidence that the transcription promoter for JUP is methylated in tumour DNAs having LOH at 17q21. We suspect that the target gene for LOH in primary human breast tumours on chromosome 17q21 is either JUP and results in a haploinsufficiency for expression or may be an unidentified gene located in the interval between D17S846 and JUP. © 2004 Cancer Research UK

Initial Results of monoPolyTM Silicon Solar Cells at SERIS

10.1109/PVSC.2018.85481062018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC1991-199

Superior optoelectrical properties of magnetron sputter-deposited cerium-doped indium oxide thin films for solar cell applications

10.1016/j.ceramint.2020.09.006Ceramics International4721798-180

Intragrain defects in polycrystalline silicon thin-film solar cells on glass by aluminum-induced crystallization and subsequent epitaxy

The origin of intragrain defects in polycrystalline silicon films grown by ion-assisted deposition (IAD) on aluminum-induced crystallization seed layers on glass is investigated. The microstructure of these polycrystalline Si films is bimodal, with near defect-free regions of orientation along the growth direction and highly defective regions containing smaller grains of orientation. In the defective regions, the dominant structural defects are twins in the seed layer and stacking faults in the IAD-grown epitaxial layer, both lying on {111} planes. The stacking faults originate at the seed layer surface due to surface imperfections, indicating that the quality of the seed layer surface plays an important role for the quality of the epitaxial Si film. We find a clear correlation between the structural crystal quality and defect-related radiative transitions at sub-bandgap wavelengths. Two dominant defect levels (~ 0.20 eV and ~ 0.29 eV below the conduction band edge) are observed and identified as impurity-related.link_to_subscribed_fulltex

Intragrain defects in polycrystalline silicon thin-film solar cells on glass by aluminum-induced crystallization and subsequent epitaxy

The origin of intragrain defects in polycrystalline silicon films grown by ion-assisted deposition (IAD) on aluminum-induced crystallization seed layers on glass is investigated. The microstructure of these polycrystalline Si films is bimodal, with near defect-free regions of orientation along the growth direction and highly defective regions containing smaller grains of orientation. In the defective regions, the dominant structural defects are twins in the seed layer and stacking faults in the IAD-grown epitaxial layer, both lying on {111} planes. The stacking faults originate at the seed layer surface due to surface imperfections, indicating that the quality of the seed layer surface plays an important role for the quality of the epitaxial Si film. We find a clear correlation between the structural crystal quality and defect-related radiative transitions at sub-bandgap wavelengths. Two dominant defect levels (~ 0.20 eV and ~ 0.29 eV below the conduction band edge) are observed and identified as impurity-related.link_to_subscribed_fulltex

Mid-infrared reflectance and transmittance characterization of phosphorus and boron diffused silicon solar wafers

10.1016/j.solmat.2019.110286Solar Energy Materials and Solar Cells205110286-11028

An ab-initio investigation of mechanical and thermodynamic properties of Ag2MgSn(S/Se)4 in kesterite and stannite phases

10.1007/s00339-021-04741-0Applied Physics A127