Ramp Type HTS Josephson Junctions with PrBaCuGaO Barriers

Ramp type Josephson junctions have been fabricated using DyBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// as electrode material and PrBa/sub 2/Cu/sub 3-x/Ga/sub x/O/sub 7-/spl delta// with x=0, 0.10 and 0.40 as junction barriers. Barrier thickness lie between 6-30 nm. Several junctions without barrier were made in order to find ways to minimize the damage of the ramp interface. In total about 40 chips were fabricated each containing several junctions and their I-V characteristics measured for various temperatures down to 4.2 K. Only those junctions showing clear RSJ-like curves were selected to be analyzed. In some cases we also measured I/sub c/ as a function of a small applied field and obtained a clear Fraunhofer pattern, but there is a tendency to flux trapping as evidenced by LTSEM. It was found at 4.2 K that the critical current density J/sub c/ scales with the specific resistance R/sub n/A as J/sub c/=C/sub bar/(R/sub n/A)/sup -m/ (m=1.8/spl plusmn/0.5). The barrier material dependent constant C/sub bar/ increases with x, whereas, for a given d, J/sub c/ is constant and R/sub n/A increase

A novel astronomical application for formation flying small satellites

OLFAR, Orbiting Low Frequency Antennas for Radio Astronomy, will be a space mission to observe the universe frequencies below 30 MHz, as it was never done before with an orbiting telescope. Because of the ionospheric scintillations below 30 MHz and the opaqueness of the ionosphere below 15 MHz, a space mission is the only opportunity for this as yet unexplored frequency range in radio astronomy. The frequency band is scientifically very interesting for exploring the early cosmos at high hydrogen redshifts, the so-called dark-ages and the epoch of reionization, the discovery of planetary and solar bursts in other solar systems, for obtaining a tomographic view of space weather, ultra-high energy cosmic rays and for many other astronomical areas of interest. Because of the low observing frequency the aperture size of the instrument must be in the order of 100 km. This requires a distributed space mission which is proposed to be implemented using formation flying of small satellites. The individual satellites are broken down in five major subsystems: the spacecraft bus, the antenna design, the frontend, backend and data transport. One of the largest challenges is the inter-satellite communication. In this paper the concept and design considerations of OLFAR are presented

A high-Tc 4-bit periodic threshold analog-to-digital converter

Using ramp-type Josephson junctions a 4-bit periodic threshold ADC has been designed, fabricated and tested. Practical design constraints will be discussed in terms of noise immunity, flux flow, available technology, switching speed etc. In a period of four years we fabricated about 100 chips in order to bring the technology to an acceptable level and to test various designs and circuit layouts. This resulted in a basic comparator that is rather insensitive to the stray field generated by the analog input signal or variations in mask alignment during fabrication. The input signal is fed into the comparators using a resistive divider network. Full functionality at low frequencies has been demonstrate

An HTS Quasi-One junction SQUID-based periodic threshold comparator for a 4-bit superconductive flash A/D converter

An all high-Tc periodic threshold comparator for application in a 4-bit superconductive A/D converter has been realized and tested. The theoretical threshold curve of the comparator is calculated and compared to the measured results. Furthermore, the thermal noise immunity and the influence of flux-flow are considered, resulting in practical design constraints for the comparator circui

High-Tc ramp-type Josephson junctions on MgO substrates for Terahertz applications

The authors successfully fabricated high-Tc ramp-type junctions with PrBa2Cu3-xGaxO7-δ (PBCGO: x=0.1, 0.4) barriers on MgO substrates. The junctions showed resistively shunted Josephson junction (RSJ)-like I-V curves with thermally and voltage activated conductivity. The IcRn products for these junctions scaled very well with the Ga-doping. Maximum response of the junctions for 100-GHz millimeter-wave irradiation could be observed up to 12 mV corresponding to 6 THz. Using far infrared laser radiation, we confirmed a terahertz (THz) response of these junctions. These results show promise for THz-wave applications of ramp-type Josephson junctions

Model order reduction of large scale ODE systems : MOR for ANSYS versus ROM workbench

In this paper we compare the numerical results obtained by different model order reduction software tools, in order to test their scalability for relevant problems of the microelectronic-industry. MOR for ANSYS [2J is implemented in C++ and ROM Workbench [3J is a MATLAB code. The chosen benchmarks are large scale linear ODE systems, which arise from the finite element discretisation of electro-thermal MEMS models

Nitrogen enrichment lowers Betula pendula green and yellow leaf stoichiometry irrespective of effects of elevated carbon dioxide.

Elevated carbon dioxide (C

Characterization of ramp-type YBa₂Cu₃O₇ junctions by AFM

We studied the morphology of ramps in REBa2Cu3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by Atomic Force Microscopy (AFM) and High Resolution Electron Microscopy (HREM). The ramps were fabricated by Ar ion beam etching using different masks of standard photoresist and TiN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e., formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence. Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBa2Cu3-xGaxO7) on the ramp. First results show a crystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, can even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well-defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO and on the angle of incidence of the ion beam. Hard masks, like TIN, have a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence and, subsequently, in a low etching rate on the ram