Resistivity Differences in C49 Tisi₂ Films Formeid by Rapid Thermal Processing

ABSTRACTTiSi2 films produced from co-sputtered Ti/Si mixtures by rapid thermal processing at temperatures around 630°C were found to have a higher resistivity than films formed by the solid state reaction of deposited Ti with (100) silicon during asimilar anneal. Diffraction studies indicated the films comprised of the C49 phase only. It is argued that the resistivity difference arises from the extremely high (3106cm−1) stacking fault density in the annealed co-sputtered layers.</jats:p