Optoelectric spin injection in semiconductor heterostructures without ferromagnet

We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination when the conduction electron momentum distribution is shifted with respect to the momentum distribution of holes in the spin split valence subbands. Spin current appears when the spin polarization is injected from the quantum well into the $n$-doped region of the $pn$ junction. The accompanied emission of circularly polarized light from the quantum well can serve as a spin polarization detector.Comment: 2 figure

Conductance fluctuations in diffusive rings: Berry phase effects and criteria for adiabaticity

We study Berry phase effects on conductance properties of diffusive mesoscopic conductors, which are caused by an electron spin moving through an orientationally inhomogeneous magnetic field. Extending previous work, we start with an exact, i.e. not assuming adiabaticity, calculation of the universal conductance fluctuations in a diffusive ring within the weak localization regime, based on a differential equation which we derive for the diffuson in the presence of Zeeman coupling to a magnetic field texture. We calculate the field strength required for adiabaticity and show that this strength is reduced by the diffusive motion. We demonstrate that not only the phases but also the amplitudes of the h/2e Aharonov-Bohm oscillations are strongly affected by the Berry phase. In particular, we show that these amplitudes are completely suppressed at certain magic tilt angles of the external fields, and thereby provide a useful criterion for experimental searches. We also discuss Berry phase-like effects resulting from spin-orbit interaction in diffusive conductors and derive exact formulas for both magnetoconductance and conductance fluctuations. We discuss the power spectra of the magnetoconductance and the conductance fluctuations for inhomogeneous magnetic fields and for spin-orbit interaction.Comment: 18 pages, 13 figures; minor revisions. To appear in Phys. Rev.

Spin Precession and Oscillations in Mesoscopic Systems

We compare and contrast magneto-transport oscillations in the fully quantum (single-electron coherent) and classical limits for a simple but illustrative model. In particular, we study the induced magnetization and spin current in a two-terminal double-barrier structure with an applied Zeeman field between the barriers and spin disequilibrium in the contacts. Classically, the spin current shows strong tunneling resonances due to spin precession in the region between the two barriers. However, these oscillations are distinguishable from those in the fully coherent case, for which a proper treatment of the electron phase is required. We explain the differences in terms of the presence or absence of coherent multiple wave reflections.Comment: 9 pages, 5 figure

Anisotropic splitting of intersubband spin plasmons in quantum wells with bulk and structural inversion asymmetry

In semiconductor heterostructures, bulk and structural inversion asymmetry and spin-orbit coupling induce a k-dependent spin splitting of valence and conduction subbands, which can be viewed as being caused by momentum-dependent crystal magnetic fields. This paper studies the influence of these effective magnetic fields on the intersubband spin dynamics in an asymmetric n-type GaAs/AlGaAs quantum well. We calculate the dispersions of intersubband spin plasmons using linear response theory. The so-called D'yakonov-Perel' decoherence mechanism is inactive for collective intersubband excitations, i.e., crystal magnetic fields do not lead to decoherence of spin plasmons. Instead, we predict that the main signature of bulk and structural inversion asymmetry in intersubband spin dynamics is a three-fold, anisotropic splitting of the spin plasmon dispersion. The importance of many-body effects is pointed out, and conditions for experimental observation with inelastic light scattering are discussed.Comment: 8 pages, 6 figure

Spin battery operated by ferromagnetic resonance

Precessing ferromagnets are predicted to inject a spin current into adjacent conductors via Ohmic contacts, irrespective of a conductance mismatch with, for example, doped semiconductors. This opens the way to create a pure spin source spin battery by the ferromagnetic resonance. We estimate the spin current and spin bias for different material combinations.Comment: The estimate for the magnitude of the spin bias is improved. We find that it is feasible to get a measurable signal of the order of the microwave frequency already for moderate rf intensitie

Spin relaxation: From 2D to 1D

In inversion asymmetric semiconductors, spin-orbit interactions give rise to very effective relaxation mechanisms of the electron spin. Recent work, based on the dimensionally constrained D'yakonov Perel' mechanism, describes increasing electron-spin relaxation times for two-dimensional conducting layers with decreasing channel width. The slow-down of the spin relaxation can be understood as a precursor of the one-dimensional limit

Spin-polarized current in a Rashba ring pumped by a microwave field

We report a theoretical study on generation of a spin polarized charge current with arbitrary spin polarization, including the fully-spin-polarized current. In a two-terminal mesoscopic ring device, the Rashba spin-orbit coupling (RSOC) is considered as well as a microwave field applied on one of arms of the ring. It is shown that at zero external bias a spin current can be produced in addition to the usual charge current pumped by the microwave field, which is attributed to the the quantum interference effect of the RSOC induced spin precession phase. By varying the system parameters such as the microwave frequency and the RSOC strength, not only the magnitude but also the direction of the spin current can be efficiently controlled, moreover, the spin-polarization degree of the charge current can readily be tuned by these system parameters in the range [-1,1]. Since all the parameters can be controlled electrically in our study, the proposed device may shed light on the possibility of an all-electrical generation and tuning of a spin-polarized current in the field of the spintronics. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2010