AC Conductance in Dense Array of the Ge0.7_{0.7}Si0.3_{0.3} Quantum Dots in Si

Complex AC-conductance, $\sigma^{AC}$, in the systems with dense Ge$_{0.7}$Si$_{0.3}$ quantum dot (QD) arrays in Si has been determined from simultaneous measurements of attenuation, $\Delta\Gamma=\Gamma(H)-\Gamma(0)$, and velocity, $\Delta V /V=(V(H)-V(0)) / V(0)$, of surface acoustic waves (SAW) with frequencies $f$ = 30-300 MHz as functions of transverse magnetic field $H \leq$ 18 T in the temperature range $T$ = 1-20 K. It has been shown that in the sample with dopant (B) concentration 8.2$\times 10^{11}$ cm$^{-2}$ at temperatures $T \leq$4 K the AC conductivity is dominated by hopping between states localized in different QDs. The observed power-law temperature dependence, $\sigma_1(H=0)\propto T^{2.4}$, and weak frequency dependence, $\sigma_1(H=0)\propto \omega^0$, of the AC conductivity are consistent with predictions of the two-site model for AC hopping conductivity for the case of $\omega \tau_0 \gg$1, where $\omega=2\pi f$ is the SAW angular frequency and $\tau_0$ is the typical population relaxation time. At $T >$ 7 K the AC conductivity is due to thermal activation of the carriers (holes) to the mobility edge. In intermediate temperature region 4$< T<$ 7 K, where AC conductivity is due to a combination of hops between QDs and diffusion on the mobility edge, one succeeded to separate both contributions. Temperature dependence of hopping contribution to the conductivity above $T^*\sim$ 4.5 K saturates, evidencing crossover to the regime where $\omega \tau_0 <$1. From crossover condition, $\omega \tau_0(T^*)$ = 1, the typical value, $\tau_0$, of the relaxation time has been determined.Comment: revtex, 3 pages, 6 figure

Crystal structure of mixed fluorites Ca(1-x)Sr(x)F(2) and Sr(1-x)Ba(x)F(2) and luminescence of Eu(2+) in the crystals

Within the framework of the virtual crystal method implemented in the shell model and pair potential approximation the crystal structure of mixed fluorites Ca(1-x)Sr(x)F(2) and Sr(1-x)Ba(x)F(2) has been calculated. The impurity center Eu(2+) and the distance Eu(2+)-F in this crystals have been also calculated. The low level position of excited 4f65d configuration of the Eu(2+) ion has been expressed using phenomenological dependence on distance E(2+)-F. The dependences of Stokes shift and Huang-Rhys factor on concentration x have been received for yellow luminescence in Sr(1-x)Ba(x)F(2):Eu(2+). The value x, for which the eg -level of Eu(2+) ion will be in conduction band in Sr(1-x)Ba(x)F(2):Eu(2+) has been calculated.Comment: 8 pages, 3 figures. The manuscript is sent to journal 'Physics of the solid state'. The results will be submitted on inernational conference SCINTMAT'2002 in oral session (june,20-22,2002,Ekaterinburg,Russia). Corresponding author e-mail: [email protected]

Influence of the preliminary annealing conditions on step motion at the homoepitaxy on the Si(100) surface

In this paper, the motion of steps SA and SB on the Si(100) surface in the process of Si Molecular beam epitaxy (MBE) is explored. The study was carried out by means of the reflection intensity dependence behavior analysis of reflection high-energy electron diffraction (RHEED) corresponding to the (2×1) and (1×2) reconstructions. Superstructural rearrangement from a two-domain to a single-domain surface is associated with the bilayer step formation, which occurs due to the different motion rates of the steps SA and SB. Based on the research conducted, the conditions under which the step doubling occurs were determined. A behavior analysis of the diffraction reflection intensity dependences showed that an increasing of preliminary annealing time and temperature facilitates to the faster convergence of the steps SA and SB, but to the slower recovery of the initial surface. The presented experimental results indicate that step movement rate difference depends on the step A edge kink density