Spectral transformation in the SOFI complex for processing photographic images on the ES computer, part 1

A description is given of three programs catalogued in the form of object modules in the library of a system for processing photographic images computer. PFT is the subprogram of the multi-dimensional BPF of real-valued information, in the operative computer memory. INRECO is a subprogram-interface between the real and complex formats for representing two-dimensional spectra and images. FFT2 is a subprogram for calculating the correlation functions of the image using the previous subprograms

Programs for high-speed Fourier, Mellin and Fourier-Bessel transforms

Several FORTRAN program modules for performing one-dimensional and two-dimensional discrete Fourier transforms, Mellin, and Fourier-Bessel transforms are described along with programs that realize the algebra of high speed Fourier transforms on a computer. The programs can perform numerical harmonic analysis of functions, synthesize complex optical filters on a computer, and model holographic image processing methods

ON THE SPECIFIC FEATURES OF SILICON CARBIDE HETEROPOLYTYPE EPITAXY

Specific features of silicon carbide layer formation with the structure (polytype) different from the SiC-substrate structure (polytype) are considered. Simple theoretical foundations of the nonstoichiometric character, impurities, C- and Si-faces effect on the heteropolytype epitaxy (HPE) of silicon carbide are proposed. By means of Harrison’s bond orbital model it is shown that the adsorption possibility for the C-face is much greater than for the Si-face. Within the scopes of the earlier proposed models (D-model and vacancy model) it is demonstrated that the presence of impurities changes characteristic lifetimes of the HPE process and the transition layer widths: impurities which enforce the interpolytype transition decrease corresponding life-time constants and the transition layer widths. For interpretation of the polytype stripes existence within the transition layer, the model of specific spinodal decomposition taking into account vacancy concentrations variations in both SiC sublattices is used

A description of a system of programs for mathematically processing on unified series (YeS) computers photographic images of the Earth taken from spacecraft

A description of a batch of programs for the YeS-1040 computer combined into an automated system for processing photo (and video) images of the Earth's surface, taken from spacecraft, is presented. Individual programs with the detailed discussion of the algorithmic and programmatic facilities needed by the user are presented. The basic principles for assembling the system, and the control programs are included. The exchange format within whose framework the cataloging of any programs recommended for the system of processing will be activated in the future is displayed

Depth and thermal stability of dry etch damage in GaN Schottky diodes

GaN Schottky diodes were exposed to N2 or H2 Inductively Coupled Plasmas prior to deposition of the rectifying contact. Subsequent annealing, wet photochemical etching or (NH4)2S surface passivation treatments were examined for their effect on diode current- voltage characteristics. We found that either annealing at 750 °C under N2, or removal of ~500-600 Å of the surface essentially restored the initial I-V characteristics. There was no measurable improvement in the plasma-exposed diode behavior with (NH4)2S treatments

A New Mechanism for the Alpha to Omega Martensitic Transformation in Pure Titanium

We propose a new direct mechanism for the pressure driven alpha to omega martensitic transformation in pure titanium. A systematic algorithm enumerates all possible mechanisms whose energy barriers are evaluated. A new, homogeneous mechanism emerges with a barrier at least four times lower than other mechanisms. This mechanism remains favorable in a simple nucleation model.Comment: 4 pages, 4 figure

ФОТОЭЛЕКТРИЧЕСКИЕ ПРЕОБРАЗОВАТЕЛИ В СИСТЕМЕ СО СПЕКТРАЛЬНЫМ РАСЩЕПЛЕНИЕМСОЛНЕЧНОЙ ЭНЕРГИИ

This paper presents results on the simulation of photo converters in a spectral splitting system where solar radiation is separated into three spectral ranges (∆λ1<500 nm, ∆λ2 = 500−725 nm and ∆λ3>725 nm) by means of dichroic filters and then converted to electrical energy by photoconverters based on InGaN/GaN, GaAs/AlGaAs single−junction heterostructures and monocrystalline silicon c−Si. Special attention is paid to the absorption spectrum spreading due to more efficient conversion of the ultraviolet part of the spectrum. The total efficiency of the system varies from 21% to 37% depending on the design of heterostructures.Представлены результаты моделирования фотоэлектрических преобразователей в системе со спектральным расщеплением солнечной энергии, в которой солнечное излучение разделяется с помощью дихроичных фильтров на три спектральных диапазона (∆λ1 < 500 нм, ∆λ2 = 500÷725 нм, ∆λ3 > 725 нм) и затем преобразуется в электроэнергию фотоэлектрическими преобразователями на основе однопереходных гетероструктур InGaN/GaN, GaAs/AlGaAs и монокристаллического кремния c−Si. Особое внимание уделено исследованию расширения спектрального диапазона поглощения системы за счет более эффективного преобразования ультрафиолетовой части спектра. Суммарный КПД системы на всем спектре варьируется от 21 до 37 % в зависимости от дизайна гетероструктур однопереходных фотоэлектрических пре-образователей и вариантов оптических систем

Структурные, электрические и люминесцентные характеристики ультрафиолетовых светодиодов, выращенных методом хлорид–гидридной эпитаксии

Electrical and luminescent properties of near−UV light emitting diode structures (LEDs) prepared by hydride vapor phase epitaxy (HVPE) were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates) of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.Изучены электрические и люминесцентные характеристики светодиодных структур (СД), излучающих в ближней ультрафиолетовой (УФ) области и выращенных методом хлорид−гидридной эпитаксии. Обнаружены различия в характеристиках УФ СД, выращенных в номинально одинаковых условиях, которые приписывают различиям в структурном совершенстве (плотности дислокаций и дислокационных агломератов) в активных слоях GaN, разнице в степени релаксации напряжений, достигаемой с помощью сверхрешеток AlGaN/AlGaN, а также существованию каналов токовых утечек в слоях AlGaN, ограничивающих заряд в двойной гетероструктуре.

Dark Energy from Virtual Gravitons (GCDM Model vs. ΛCDM Model)

The dark energy from virtual gravitons is consistent with observational data on supernovas with the same accuracy as the ΛCDM model. The fact that virtual gravitons are capable of producing a de Sitter accelerated expansion of the FLRW universe was established in 2008 (see references). The combination of conformal non-invariance with zero rest mass of gravitons (unique properties of the gravitational field) leads to the appearance of graviton dark energy in a mater-dominated era; this fact explains the relatively recent appearance of the dark energy and answers the question “Why now?”. The transition redshifts (where deceleration is replaced by acceleration) that follow from the graviton theory are consistent with model-independent transition redshifts derived from observational data. Prospects for testing the GCDM model (the graviton model of dark energy where G stands for gravitons) and comparison with the ΛCDM model are discussed