Organic Single-Crystal Field-Effect Transistors

We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has made these investigations possible. Particular attention is devoted to the growth and characterization of single crystals of organic materials and to different techniques that have been developed for device fabrication. We then concentrate on the measurements of the electrical characteristics. In most cases, these characteristics are highly reproducible and demonstrate the quality of the single crystal transistors. Particularly noticeable are the small sub-threshold slope, the non-monotonic temperature dependence of the mobility, and its weak dependence on the gate voltage. In the best rubrene transistors, room-temperature values of $\mu$ as high as 15 cm$^2$/Vs have been observed. This represents an order-of-magnitude increase with respect to the highest mobility previously reported for organic thin film transistors. In addition, the highest-quality single-crystal devices exhibit a significant anisotropy of the conduction properties with respect to the crystallographic direction. These observations indicate that the field effect transistors fabricated on single crystals are suitable for the study of the \textit{intrinsic} electronic properties of organic molecular semiconductors. We conclude by indicating some directions in which near-future work should focus to progress further in this rapidly evolving area of research.Comment: Review article, to appear in special issue of Phys. Stat. Sol. on organic semiconductor

Equilibrium tuned by a magnetic field in phase separated manganite

We present magnetic and transport measurements on La5/8-yPryCa3/8MnO3 with y = 0.3, a manganite compound exhibiting intrinsic multiphase coexistence of sub-micrometric ferromagnetic and antiferromagnetic charge ordered regions. Time relaxation effects between 60 and 120K, and the obtained magnetic and resistive viscosities, unveils the dynamic nature of the phase separated state. An experimental procedure based on the derivative of the time relaxation after the application and removal of a magnetic field enables the determination of the otherwise unreachable equilibrium state of the phase separated system. With this procedure the equilibrium phase fraction for zero field as a function of temperature is obtained. The presented results allow a correlation between the distance of the system to the equilibrium state and its relaxation behavior.Comment: 13 pages, 5 figures. Submited to Journal of Physics: Condensed Matte

Light Quasiparticles Dominate Electronic Transport in Molecular Crystal Field-Effect Transistors

We report on an infrared spectroscopy study of mobile holes in the accumulation layer of organic field-effect transistors based on rubrene single crystals. Our data indicate that both transport and infrared properties of these transistors at room temperature are governed by light quasiparticles in molecular orbital bands with the effective masses m* comparable to free electron mass. Furthermore, the m* values inferred from our experiments are in agreement with those determined from band structure calculations. These findings reveal no evidence for prominent polaronic effects, which is at variance with the common beliefs of polaron formation in molecular solids.Comment: 4 pages, 4 figure

Intrinsic charge transport on the surface of organic semiconductors

The novel technique based on air-gap transistor stamps enabled realization of the intrinsic (not dominated by static disorder) transport of the electric-field-induced charge carriers on the surface of rubrene crystals over a wide temperature range. The signatures of the intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. The anisotropy of mu vanishes in the activation regime at lower temperatures, where the charge transport becomes dominated by shallow traps. The deep traps, deliberately introduced into the crystal by X-ray radiation, increase the field-effect threshold without affecting the mobility. These traps filled above the field-effect threshold do not scatter the mobile polaronic carriers.Comment: 10 pages, 4 figure

Mesoscopic, Non-equilibrium Fluctuations of Inhomogeneous Electronic States in Manganites

By using the dark-field real-space imaging technique of transmission electron microscopy (TEM), we have observed slow 200 A-scale fluctuations of charge-ordered (CO) phase in mixed-valent manganites under a strong electron beam irradiation. In addition to these unusual fluctuations of the CO phase, we observed the switching-type fluctuations of electrical resistivity in the same sample, which were found to be as large as several percents. Systematic analysis indicates that these two different types of fluctuations with a similar time scale of the order of seconds are interconnected through a meta-stable insulating charge-disordered state. Current dependence of the fluctuations suggests a non-equilibrium nature of this slow dynamics.Comment: To appear in Europhysics Letter

Methodology for integrating production and technical bases for servicing and repairing departmental vehicles

The relevance of this study lies in the fact that motor transport services of federal ministries and departments of the Russian Federation, agencies subordinate to them, law enforcement and supervisory authorities are carried out by departmental road transport. The operation of departmental road transport in modern conditions is based on documents developed for public road transport. In some cases, departmental acts on the organization of the work of vehicles and personnel in relation to the functions and tasks of the relevant department are not systematically used. The operation of departmental road transport is characterized by excessive dispersion of regional production and technical bases for the maintenance, maintenance and repair of a specialized fleet, as a rule, assigned to individual institutions. As a result, more material and technical resources, rolling stock and personnel are involved in the transportation process of departmental road transport than at public road transport. Increasing the efficiency of departmental road transport consists in the consolidation and centralization of regional production and technical bases, as well as in rationing the resource provision of the transport process. The subject of the study is the regularities of the functioning of the production and technical bases units of the departmental structure. The purpose of this study is to increase the efficiency of departmental road transport operation due to the territorial integration of production and technical bases. To achieve this goal, it is necessary to solve a number of tasks, the specifics of which are determined by the features of a specialized departmental road transport on the example of the divisions of the regional Department of the Federal Penitentiary Service for the Rostov region, concluded: a) in the collection, grouping and processing of statistical information from divisions by type, model, number and costs of operation and performance of transportation in the field of transport by specialized rolling stock; b) determination by geographical coordinates of the location of divisions in the region; c) the compilation of an adjacent matrix of distances between divisions. The methodology of the study includes a methodology for the territorial integration of production and technical bases of regional units of departmental road transport based on the «center of gravity» method, taking into account the costs of operating a specialized fleet and determining the head production and technical bases. The obtained research results can be used for other departments, divisions, organizations and services of departmental structures in which a specialized fleet is involved

Multiphase segregation and metal-insulator transition in single crystal La(5/8-y)Pr(y)Ca(3/8)MnO3

The insulator-metal transition in single crystal La(5/8-y)Pr(y)Ca(3/8)MnO3 with y=0.35 was studied using synchrotron x-ray diffraction, electric resistivity, magnetic susceptibility, and specific heat measurements. Despite the dramatic drop in the resistivity at the insulator-metal transition temperature Tmi, the charge-ordering (CO) peaks exhibit no anomaly at this temperature and continue to grow below Tmi. Our data suggest then, that in addition to the CO phase, another insulating phase is present below Tco. In this picture, the insulator-metal transition is due to the changes within this latter phase. The CO phase does not appear to play a major role in this transition. We propose that a percolation-like insulator-metal transition occurs via the growth of ferromagnetic metallic domains within the parts of the sample that do not exhibit charge ordering. Finally, we find that the low-temperature phase-separated state is unstable against x-ray irradiation, which destroys the CO phase at low temperatures.Comment: 9 pages, 9 encapsulated eps figure

Cooling rate dependence of the antiferromagnetic domain structure of a single crystalline charge ordered manganite

The low temperature phase of single crystals of Nd$_{0.5}$Ca$_{0.5}$MnO$_3$ and Gd$_{0.5}$Ca$_{0.5}$MnO$_3$ manganites is investigated by squid magnetometry. Nd$_{0.5}$Ca$_{0.5}$MnO$_3$ undergoes a charge-ordering transition at $T_{CO}$=245K, and a long range CE-type antiferromagnetic state is established at $T_N$=145K. The dc-magnetization shows a cooling rate dependence below $T_N$, associated with a weak spontaneous moment. The associated excess magnetization is related to uncompensated spins in the CE-type antiferromagnetic structure, and to the presence in this state of fully orbital ordered regions separated by orbital domain walls. The observed cooling rate dependence is interpreted to be a consequence of the rearrangement of the orbital domain state induced by the large structural changes occurring upon cooling.Comment: REVTeX4; 7 pages, 4 figures. Revised 2001/12/0

Hall effect in the accumulation layers on the surface of organic semiconductors

We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measurements, n_H, coincides with the density n calculated using the gate-channel capacitance, and becomes smaller than n in the trap-dominated regime. The Hall data are consistent with the diffusive band-like motion of field-induced charge carriers between the trapping events.Comment: 11 page

Tunable Frohlich Polarons in Organic Single-Crystal Transistors

In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device performance- has been related to the quality of the organic semiconductor. Recently, it has been appreciated that also the nearby dielectric has an unexpectedly strong influence. The mechanisms responsible for this influence are not understood. To investigate these mechanisms we have studied transport through organic single crystal FETs with different gate insulators. We find that the temperature dependence of the mobility evolves from metallic-like to insulating-like with increasing the dielectric constant of the insulator. The phenomenon is accounted for by a two-dimensional Frohlich polaron model that quantitatively describes our observations and shows that increasing the dielectric polarizability results in a crossover from the weak to the strong polaronic coupling regime