Investigations of lunar materials Final report

Lunar rock erosion estimatio

Electric Field Enhancement of Electron Emission Rates from Z(1/2) Centers in 4H-SiC

Z1/2 defect centers were produced by irradiating 4H-SiC bulk samples with 1 MeV electrons at room temperature. The emission rate dependence on the electric field in the depletion region was measured using deep level transient spectroscopy and double-correlation deep level transient spectroscopy. It is found that the Z1/2 defect level shows a strong electric field dependence with activation energy decreasing from Ec−0.72 eV at zero field to Ec−0.47 eV at 6.91×105 V/cm. The phonon assisted tunneling model of Karpus and Perel [Sov. Phys. JETP 64, 1376 (1986) ] completely describes the experimental data. This model describes the dependence of the emission rate on electric field F as en(F) = eno exp(F2/Fc2), where Fc is the characteristic field that depends on the phonon assisted tunneling time τ2. The values of Fc and τ2 were determined and the analysis of the data leads to the suggestion that Z1/2 may be a substitutional point defect

Electric Field Enhancement of Electron Emission Rates from Z(1/2) Centers in 4H-SiC

Z1/2 defect centers were produced by irradiating 4H-SiC bulk samples with 1 MeV electrons at room temperature. The emission rate dependence on the electric field in the depletion region was measured using deep level transient spectroscopy and double-correlation deep level transient spectroscopy. It is found that the Z1/2 defect level shows a strong electric field dependence with activation energy decreasing from Ec−0.72 eV at zero field to Ec−0.47 eV at 6.91×105 V/cm. The phonon assisted tunneling model of Karpus and Perel [Sov. Phys. JETP 64, 1376 (1986) ] completely describes the experimental data. This model describes the dependence of the emission rate on electric field F as en(F) = eno exp(F2/Fc2), where Fc is the characteristic field that depends on the phonon assisted tunneling time τ2. The values of Fc and τ2 were determined and the analysis of the data leads to the suggestion that Z1/2 may be a substitutional point defect

Deep Level near E\u3csub\u3eC\u3c/sub\u3e - 0.55 eV in Undoped 4H-SiC Substrates

A variety of 4H-SiC samples from undoped crystals grown by the physical vapor transport technique have been studied by temperature dependent Hall effect, optical and thermal admittance spectroscopy and thermally stimulated current. In most samples studied the activation energies were in the range 0.9 - 1.6 eV expected for commercial grade HPSI 4H-SiC. However, in several samples from developmental crystals a previously unreported deep level at EC-0.55 ± 0.01 eV was observed. Thermal admittance spectroscopy detected one level with an energy of about 0.53 eV while optical admittance spectroscopy measurements resolved two levels at 0.56 and 0.64 eV. Thermally stimulated current measurements made to study compensated levels in the material detected several peaks at energies in the range 0.2 to 0.6 eV