Modeling of micro- and nano-scale domain recording by high-voltage atomic force microscopy in ferroelectrics-semiconductors

The equilibrium sizes of micro- and nano-domains caused by electric field of atomic force microscope tip in ferroelectric semiconductor crystals have been calculated. The domain was considered as a prolate semi-ellipsoid with rather thin domain walls. For the first time we modified the Landauer model allowing for semiconductor properties of the sample and the surface energy of the domain butt. The free carriers inside the crystal lead to the formation of the screening layer around the domain, which partially shields its interior from the depolarization field. We expressed the radius and length of the domain though the crystal material parameters (screening radius, spontaneous polarization value, dielectric permittivity tensor) and atomic force microscope tip characteristics (charge, radius of curvature). The obtained dependence of domain radius via applied voltage is in a good quantitative agreement with the ones of submicron ferroelectric domains recorded by high-voltage atomic force and scanning probe microscopy in LiNbO3 and LiTaO3 crystals.Comment: 21 pages, 5 figure

Modelling of Pyroelectric Response in Inhomogeneous Ferroelectric-Semiconductor Films

We have modified Landau-Khalatnikov approach and shown that the pyroelectric response of inhomogeneous ferroelectric-semiconductor films can be described by using six coupled equations for six order parameters: average displacement, its mean-square fluctuation and correlation with charge defects density fluctuations, average pyroelectric coefficient, its fluctuation and correlation with charge defects density fluctuations. Coupled equations demonstrate the inhomogeneous reversal of pyroelectric response in contrast to the equations of Landau-Khalatnikov type, which describe the homogeneous reversal with the sharp pyroelectric coefficient peak near the thermodynamic coercive field value. Within the framework of our model pyroelectric hysteresis loop becomes much smoother, thinner and lower as well as pyroelectric coefficient peaks near the coercive field completely disappear under the increase of disordering caused by defects. This effect is similar to the well-known "square to slim transition" of the ferroelectric hysteresis loops in relaxor ferroelectrics. Also the increase of defect concentration leads to the drastic decrease of the coercive field typical for disordered ferroelectrics. Usually pyroelectric hysteresis loops of doped and inhomogeneous ferroelectrics have typical smooth shape without any pyroelectric coefficient peaks and coercive field values much lower than the thermodynamic one. Therefore our approach qualitatively explains available experimental results. Rather well quantitative agreement between our modelling and typical Pb(Zr,Ti)O3-film pyroelectric and ferroelectric loops has been obtained.Comment: 14 pages, 5 figure