Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

In order to characterize magnetic-field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the cyclotron resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with the THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.Comment: 8 pages, 11 figure

Quasi-classical cyclotron resonance of Dirac fermions in highly doped graphene

Cyclotron resonance in highly doped graphene has been explored using infrared magnetotransmission. Contrary to previous work, which only focused on the magneto-optical properties of graphene in the quantum regime, here we study the quasi-classical response of this system. We show that it has a character of classical cyclotron resonance, with an energy which is linear in the applied magnetic field and with an effective cyclotron mass defined by the position of the Fermi level m = E_F/v_F^2.Comment: 6 pages, 4 figure

An Estimate of the Energy Gap of InN from Measurements of the Fundamental Absorption Edge

Optical absorption between 0.4 and 4.5 eV of an InN layer grown by metalorganic vapour phase epitaxy on sapphire was measured at 296 and 12 K. The layer was also characterized by measurements of the Hall effect and of infrared reflectivity in the region of the plasma edge, which determined the concentration, mobility, and effective mass of electrons in the conduction band. The energy gap of InN was estimated to be equal to 0.9 ± 0.2 eV. It was obtained from the spectral position of the fundamental absorption edge. Corrections to the energy gap resulting from the broadening of the fundamental absorption edge, from the Burstein-Moss shift, and from a band-gap shrinkage due to the impurity potential were included

Free carrier effects in gallium nitride epilayers: the valence band dispersion

The dispersion of the A-valence-band in GaN has been deduced from the observation of high-index magneto-excitonic states in polarised interband magneto-reflectivity and is found to be strongly non-parabolic with a mass in the range 1.2-1.8 m_{e}. It matches the theory of Kim et al. [Phys. Rev. B 56, 7363 (1997)] extremely well, which also gives a strong k-dependent A-valence-band mass. A strong phonon coupling leads to quenching of the observed transitions at an LO-phonon energy above the band gap and a strong non-parabolicity. The valence band was deduced from subtracting from the reduced dispersion the electron contribution with a model that includes a full treatment of the electron-phonon interaction.Comment: Revtex, 4 pages, 5 figure

BIOKID: Randomized controlled trial comparing bicarbonate and lactate buffer in biocompatible peritoneal dialysis solutions in children [ISRCTN81137991]

BACKGROUND: Peritoneal dialysis (PD) is the preferred dialysis modality in children. Its major drawback is the limited technique survival due to infections and progressive ultrafiltration failure. Conventional PD solutions exert marked acute and chronic toxicity to local tissues. Prolonged exposure is associated with severe histopathological alterations including vasculopathy, neoangiogenesis, submesothelial fibrosis and a gradual loss of the mesothelial cell layer. Recently, more biocompatible PD solutions containing reduced amounts of toxic glucose degradation products (GDPs) and buffered at neutral pH have been introduced into clinical practice. These solutions contain lactate, bicarbonate or a combination of both as buffer substance. Increasing evidence from clinical trials in adults and children suggests that the new PD fluids may allow for better long-term preservation of peritoneal morphology and function. However, the relative importance of the buffer in neutral-pH, low-GDP fluids is still unclear. In vitro, lactate is cytotoxic and vasoactive at the concentrations used in PD fluids. The BIOKID trial is designed to clarify the clinical significance of the buffer choice in biocompatible PD fluids. METHODS/DESIGN: The objective of the study is to test the hypothesis that bicarbonate based PD solutions may allow for a better preservation of peritoneal transport characteristics in children than solutions containing lactate buffer. Secondary objectives are to assess any impact of the buffer system on acid-base status, peritoneal tissue integrity and the incidence and severity of peritonitis. After a run-in period of 2 months during which a targeted cohort of 60 patients is treated with a conventional, lactate buffered, acidic, GDP containing PD fluid, patients will be stratified according to residual renal function and type of phosphate binding medication and randomized to receive either the lactate-containing Balance solution or the bicarbonate-buffered Bicavera(® )solution for a period of 10 months. Patients will be monitored by monthly physical and laboratory examinations. Peritoneal equilibration tests, 24-h dialysate and urine collections will be performed 4 times. Peritoneal biopsies will be obtained on occasion of intraabdominal surgery. Changes in small solute transport rates, markers of peritoneal tissue turnover in the effluent, acid-base status and peritonitis rates and severity will be analyzed

Faraday rotation in graphene

We study magneto--optical properties of monolayer graphene by means of quantum field theory methods in the framework of the Dirac model. We reveal a good agreement between the Dirac model and a recent experiment on giant Faraday rotation in cyclotron resonance. We also predict other regimes when the effects are well pronounced. The general dependence of the Faraday rotation and absorption on various parameters of samples is revealed both for suspended and epitaxial graphene.Comment: 10 pp; v2: typos corrected and references added, v3, v4: small changes and more reference

Evaluation of surface analysis methods for characterization of trace metal surface contaminants found in silicon IC manufacturing

A major topic at recent silicon-based integrated circuit (IC) manufacturing symposia is the pursuit of decreased contamination levels. The aim is to remove contamination from both processes and materials. In conjunction with this effort, characterization methods are being pushed to lower and lower detection limits. In this paper, we evaluate surface analysis methods used to determine the concentration of inorganic contamination on unpatterned Si wafers. We compare sampling depths, detection limits, and applicability of each method for use in support of Si IC manufacturing. This comparison is further limited to Fe and Cu which are transition metal contaminants associated with manufacturing yield loss. The surface analysis methods included in this evaluation are: Total Reflection X-Ray Fluorescence (TXRF or TRXRF); Secondary Ion Mass Spectrometry (SIMS); two post-ionization'' methods Surface Analysis by Laser Ionization (SALI) and Sputter Initiated Resonant Ionization Spectroscopy (SIRIS); Heavy Ion Backscattering Spectroscopy (HIBS); and Vapor Phase Phase Decomposition (VPD) based methods Atomic Absorption (VPD-AA) along with VPD-TXRF. Sets of 6 in. Si wafers with concentration levels between 10{sup 9} atoms/cm{sup 2} and 10{sup 12} atoms/cm{sup 2} Fe and Cu were characterized by TXRF, SIMS, SIRIS, and HIBS. This data allows estimation of detection limits (DLs) and relative method accuracy. In Section 1 we describe each surface analysis method and the circumstance under which it would be used to support Si IC manufacturing. The equipment used for this comparison and the 150 mm Si wafer set are described in Section 2. Results from each method are contrasted in Section 3. Finally, a conclusion is presented in Section 4