A major topic at recent silicon-based integrated circuit (IC) manufacturing symposia is the pursuit of decreased contamination levels. The aim is to remove contamination from both processes and materials. In conjunction with this effort, characterization methods are being pushed to lower and lower detection limits. In this paper, we evaluate surface analysis methods used to determine the concentration of inorganic contamination on unpatterned Si wafers. We compare sampling depths, detection limits, and applicability of each method for use in support of Si IC manufacturing. This comparison is further limited to Fe and Cu which are transition metal contaminants associated with manufacturing yield loss. The surface analysis methods included in this evaluation are: Total Reflection X-Ray Fluorescence (TXRF or TRXRF); Secondary Ion Mass Spectrometry (SIMS); two post-ionization'' methods Surface Analysis by Laser Ionization (SALI) and Sputter Initiated Resonant Ionization Spectroscopy (SIRIS); Heavy Ion Backscattering Spectroscopy (HIBS); and Vapor Phase Phase Decomposition (VPD) based methods Atomic Absorption (VPD-AA) along with VPD-TXRF. Sets of 6 in. Si wafers with concentration levels between 10{sup 9} atoms/cm{sup 2} and 10{sup 12} atoms/cm{sup 2} Fe and Cu were characterized by TXRF, SIMS, SIRIS, and HIBS. This data allows estimation of detection limits (DLs) and relative method accuracy. In Section 1 we describe each surface analysis method and the circumstance under which it would be used to support Si IC manufacturing. The equipment used for this comparison and the 150 mm Si wafer set are described in Section 2. Results from each method are contrasted in Section 3. Finally, a conclusion is presented in Section 4
