Role of Inter-Electron Interaction in the Pseudo-Gap Opening in High T c_c Tunneling Experiments

The analysis of tunneling experiments showing the pseudogap type behavior is carried out based on the idea of the renormalization of density of states due to the inter-electron interaction in the Cooper channel (superconducting fluctuations contribution in tunneling current). It is demonstrated that the observed kink of the zero-bias conductance $G(0,T)$ of $YBaCuO/Pb$ junctions in the vicinity of $T_c$ can be explained in terms of fluctuation theory in a quite wide range of temperature above $T_c$, using the values of microscopic parameters of the $YBaCuO$ electron spectrum taken from independent experiments. The approach proposed also permits to explain qualitatively the shape of the tunneling anomalies in $G(V,T)$ and gives a correct estimate for the pseudogap position and amplitude observed in the experiments on $BiSrCaCuO$ junctions.Comment: 5 pages, 3 figure

A local field emission study of partially aligned carbon-nanotubes by AFM probe

We report on the application of Atomic Force Microscopy (AFM) for studying the Field Emission (FE) properties of a dense array of long and vertically quasi-aligned multi-walled carbon nanotubes grown by catalytic Chemical Vapor Deposition on a silicon substrate. The use of nanometric probes enables local field emission measurements allowing investigation of effects non detectable with a conventional parallel plate setup, where the emission current is averaged on a large sample area. The micrometric inter-electrode distance let achieve high electric fields with a modest voltage source. Those features allowed us to characterize field emission for macroscopic electric fields up to 250 V/$\mu$m and attain current densities larger than 10$^5$ A/cm$^2$. FE behaviour is analyzed in the framework of the Fowler-Nordheim theory. A field enhancement factor $\gamma \approx$ 40-50 and a turn-on field $E_{turn-on} \sim$15 V/$\mu$m at an inter-electrode distance of 1 $\mu$m are estimated. Current saturation observed at high voltages in the I-V characteristics is explained in terms of a series resistance of the order of M$\Omega$. Additional effects as electrical conditioning, CNT degradation, response to laser irradiation and time stability are investigated and discussed

Field emission from single multi-wall carbon nanotubes

Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a high control capability on the geometric parameters of the field emission system (CNT length, diameter and anode-cathode distance). For several multiwalled carbon nanotubes, reproducible and quite stable emission current behaviour has been obtained with a dependence on the applied voltage well described by a series resistance modified Fowler-Nordheim model. A turn-on field of about 30 V/um and a field enhancement factor of around 100 at a cathode-anode distance of the order of 1 um have been evaluated. Finally, the effect of selective electron beam irradiation on the nanotube field emission capabilities has been extensively investigated.Comment: 16 pages, 5 figure

Local Tunneling Study of Three-Dimensional Order Parameter in the π\pi-band of Al-doped MgB2_2 Single Crystals

We have performed local tunneling spectroscopy on high quality Mg$_{1-x}$Al$_x$B$_2$ single crystals by means of Variable Temperature Scanning Tunneling Spectroscopy (STS) in magnetic field up to 3 Tesla. Single gap conductance spectra due to c-axis tunneling were extensively measured, probing different amplitudes of the three-dimensional $\Delta_\pi$ as a function of Al content. Temperature and magnetic field dependences of the conductance spectra were studied in S-I-N configuration: the effect of the doping resulted in a monotonous reduction of the locally measured $T_C$ down to 24K for x=0.2. On the other hand, we have found that the gap amplitude shows a maximum value $\Delta_\pi= 2.3$ meV for x=0.1, while the $\Delta_\pi / T_C$ ratio increases monotonously with doping. The locally measured upper critical field was found to be strongly related to the gap amplitude, showing the maximum value $H_{c2}\simeq3T$ for x=0.1 substituted samples. For this Al concentration the data revealed some spatial inhomogeneity in the distribution of $\Delta_\pi$ on nanometer scale.Comment: 4 pages, 3 figure

Field emission properties of as-grown multiwalled carbon nanotube films

Multiwalled carbon nanotubes have been produced by ethylene catalytic chemical vapor deposition and used to fabricate thick and dense freestanding films ("buckypapers") by membrane filtering. Field emission properties of buckypapers have been locally studied by means of high vacuum atomic force microscopy with a standard metallic cantilever used as anode to collect electrons emitted from the sample. Buckypapers showed an interesting linear dependence in the Fowler-Nordheim plots demonstrating their suitability as emitters. By precisely tuning the tip-sample distance in the submicron region we found out that the field enhancement factor is not affected by distance variations up to 2um. Finally, the study of current stability showed that the field emission current with intensity of about 3,3*10-5A remains remarkably stable (within 5% fluctuations) for several hours.Comment: 18 pages, 5 figure

ab-plane tunneling and Andreev spectroscopy of superconducting gap and pseudogap in (Bi,Pb)2Sr2Ca2Cu3O10 and Bi2Sr2CaCu2O8

We have measured the temperature dependence of gap features revealed by Andreev reflection Delta_s and by tunneling Delta in the ab-plane of optimal and slightly overdoped microcrystals of (BiPb)2Sr2Ca2Cu3O10 (Bi2223) with critical temperature Tc=110-115 K, and Bi2Sr2CaCu2O8 (Bi2212) with Tc=80-84 K. The tunneling conductance of Bi2223-Insulator-Bi2223 junction shows peaks at the 2Delta gap voltage, as well as dips and broad humps at other voltages. In Bi2223, similarly to the well known Bi2212 spectra, the energies corresponding to 2Delta, to the dip, and to the hump structure are in the ratio of 2:3:4. This confirms that the dip and hump features are generic to the high temperature superconductors, irrespective of the number of CuO2 layers or the BiO superstructure. On the other hand, in both compounds Delta(T) and Delta_s(T) dependences are completely different, and we conclude that the two entities have different nature.Comment: LaTeX 2e, 17 pages, 7 figures in .eps forma

Intrinsic surface depression of the order parameter under mixed (s+id)-wave pair symmetry and its effect on the critical current of high-Tc SIS Josephson junctions

An intrinsic gap depression at the Superconductor-Insulator interface due to the very short value of the coherence length in High-Tc Superconductors [HTSs] is considered, in the framework of a mixed (s+id)-wave pair symmetry for the order parameter ranging from pure s to pure d-wave. This gap depression acts as the main physical agent causing the relevant reduction of IcRn(T) values with respect to BCS expectations in HTS SIS Josephson junctions. Good agreement with various experimental data is obtained with both pure s-wave and pure d-wave symmetries of the order parameter, but with amounts of gap depression depending on the pair symmetry adopted. Regardless of the pair symmetry considered, these results prove the importance of the surface order-parameter depression in the correct interpretation of the Ic(T)Rn(T) data in HTS SIS junctions. In a case of planar YBCO-based junction the use of the de Gennes condition allowed us to tentatively obtain an upper limit for the amount of d-wave present in the order parameter of YBCO.Comment: 11 pages REVTeX file, 6 PostScript figures, to be published in J. Superconductivit