3 research outputs found
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
The magnetic moment and magnetization in GaAs/GaInAs/GaAs
heterostructures with Mn deluted in GaAs cover layers and with atomically
controlled Mn -layer thicknesses near GaInAs-quantum well (3 nm)
in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been
investigated. The mass magnetization all of the samples of
GaAs/GaInAs/GaAs with Mn increases with the increasing of the
magnetic field that pointed out on the presence of low-dimensional
ferromagnetism in the manganese depletion layer of GaAs based structures. It
has been estimated the manganese content threshold at which the ferromagnetic
ordering was found.Comment: 8 pages, 3 figure
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found