131 research outputs found
Sub-monolayer nucleation and growth of complex oxide heterostructures at high supersaturation and rapid flux modulation
We report on the non-trivial nanoscale kinetics of the deposition of novel
complex oxide heterostructures composed of a unit-cell thick correlated metal
LaNiO3 and dielectric LaAlO3. The multilayers demonstrate exceptionally good
crystallinity and surface morphology maintained over the large number of
layers, as confirmed by AFM, RHEED, and synchrotron X-ray diffraction. To
elucidate the physics behind the growth, the temperature of the substrate and
the deposition rate were varied over a wide range and the results were treated
in the framework of a two-layer model. These results are of fundamental
importance for synthesis of new phases of complex oxide heterostructures.Comment: 13 pages, 6 figure
Epitaxial growth of (111)-oriented LaAlO/LaNiO ultra-thin superlattices
The epitaxial stabilization of a single layer or superlattice structures
composed of complex oxide materials on polar (111) surfaces is severely
burdened by reconstructions at the interface, that commonly arise to neutralize
the polarity. We report on the synthesis of high quality LaNiO/mLaAlO
pseudo cubic (111) superlattices on polar (111)-oriented LaAlO, the
proposed complex oxide candidate for a topological insulating behavior.
Comprehensive X-Ray diffraction measurements, RHEED, and element specific
resonant X-ray absorption spectroscopy affirm their high structural and
chemical quality. The study offers an opportunity to fabricate interesting
interface and topology controlled (111) oriented superlattices based on
ortho-nickelates
Strain-controlled band engineering and self-doping in ultrathin LaNiO films
We report on a systematic study of the temperature-dependent Hall coefficient
and thermoelectric power in ultra-thin metallic LaNiO films that reveal a
strain-induced, self-doping carrier transition that is inaccessible in the
bulk. As the film strain varies from compressive to tensile at fixed
composition and stoichiometry, the transport coefficients evolve in a manner
strikingly similar to those of bulk hole-doped superconducting cuprates with
varying doping level. Density functional calculations reveal that the
strain-induced changes in the transport properties are due to self-doping in
the low-energy electronic band structure. The results imply that thin-film
epitaxy can serve as a new means to achieve hole-doping in other (negative)
charge-transfer gap transition metal oxides without resorting to chemical
substitution
Interface-engineered hole doping in Sr2IrO4/LaNiO3 heterostructure
The relativistic Mott insulator Sr2IrO4 driven by large spin-orbit
interaction is known for the Jeff = 1/2 antiferromagnetic state which closely
resembles the electronic structure of parent compounds of superconducting
cuprates. Here, we report the realization of hole-doped Sr2IrO4 by means of
interfacial charge transfer in Sr2IrO4/LaNiO3 heterostructures. X-ray
photoelectron spectroscopy on Ir 4f edge along with the X-ray absorption
spectroscopy at Ni L2 edge confirmed that 5d electrons from Ir sites are
transferred onto Ni sites, leading to markedly electronic reconstruction at the
interface. Although the Sr2IrO4/LaNiO3 heterostructure remains non-metallic, we
reveal that the transport behavior is no longer described by the Mott variable
range hopping mode, but by the Efros-Shklovskii model. These findings highlight
a powerful utility of interfaces to realize emerging electronic states of the
Ruddlesden-Popper phases of Ir-based oxides.Comment: 9 pages including 3 figures and reference
Epitaxial Stabilization of Ultrathin Films of Rare-Earth Nickelates
We report on the synthesis of ultrathin films of highly distorted EuNiO3
(ENO) grown by interrupted pulse laser epitaxy on YAlO3 (YAO) substrates.
Through mapping the phase space of nickelate thin film epitaxy, the optimal
growth temperatures were found to scale linearly with the Goldschmidt tolerance
factor. Considering the gibbs energy of the expanding film, this empirical
trend is discussed in terms of epitaxial stabilization and the escalation of
the lattice energy due to lattice distortions and decreasing symmetry. These
findings are fundamental to other complex oxide perovskites, and provide a
route to the synthesis of other perovskite structures in ultrathin-film form.Comment: 7 pages, 3 figure
Confidence sets based on the positive part James–Stein estimator with the asymptotically constant coverage probability
© 2014 Taylor & Francis. The asymptotic expansions for the coverage probability of a confidence set centred at the James–Stein estimator presented in our previous publications show that this probability depends on the non-centrality parameter τ2 (the sum of the squares of the means of normal distributions). In this paper we establish how these expansions can be used for a construction of confidence region with constant confidence level, which is asymptotically (the same formula for both case τ→0 and τ→∞) equal to some fixed value 1−α. We establish the shrinkage rate for the confidence region according to the growth of the dimension p and also the value of τ for which we observe quick decreasing of the coverage probability to the nominal level 1−α. When p→∞ this value of τ increases as O(p1/4). The accuracy of the results obtained is shown by the Monte-Carlo statistical simulations
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