Technology of fabrication of CdSxTe1-x solid solution on silicon substrate

Heterojunction between Si and CdSxTe1-x have been obtained by the method of vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si – n/CdSxTe1-x heterostructure are calculated

Evaluating multi-year, multi-site data on the energy balance closure of eddy-covariance flux measurements at cropland sites in southwestern Germany

The energy balance of eddy-covariance (EC) measurements is typically not closed, resulting in one of the main challenges in evaluating and interpreting EC flux data. Energy balance closure (EBC) is crucial for validating and improving regional and global climate models. To investigate the nature of the gap in EBC for agroecosystems, we analyzed EC measurements from two climatically contrasting regions (Kraichgau – KR – and Swabian Jura – SJ) in southwestern Germany. Data were taken at six fully equipped EC sites from 2010 to 2017. The gap in EBC was quantified by ordinary linear regression, relating the energy balance ratio (EBR), calculated as the quotient of turbulent fluxes and available energy, to the residual energy term. In order to examine potential reasons for differences in EBC, we compared the EBC under varying environmental conditions and investigated a wide range of possible controls. Overall, the variation in EBC was found to be higher during winter than summer. Moreover, we determined that the site had a statistically significant effect on EBC but no significant effect on either crop or region (KR vs SJ). The time-variable footprints of all EC stations were estimated based on data measured in 2015, complimented by micro-topographic analyses along the prevailing wind direction. The smallest mean annual energy balance gap was 17&thinsp;% in KR and 13&thinsp;% in SJ. Highest EBRs were mostly found for winds from the prevailing wind direction. The spread of EBRs distinctly narrowed under unstable atmospheric conditions, strong buoyancy, and high friction velocities. Smaller footprint areas led to better EBC due to increasing homogeneity. Flow distortions caused by the back head of the anemometer negatively affected EBC during corresponding wind conditions.</p

VULNERABILITY ANALYSIS OF EMERGENCY RESPONSE SYSTEM BASED ON NAVIGATIONAL UNITS IN CASE OF VEHICLE ACCIDENTS

When we focusing Emergency response system based on navigational units vulnerability to intentional interference and an opportunity incentive to attackers who wants to fool or impair Emergency response system based on navigational units especially smartphones and drones then Spoofing interference is a considerably powerful attack than jamming cause of jammer attacks block GNSS legitimate communication signals immediately on several receivers this arise mitigation strategy and counter measures for efficient jamming detection before damages are done. However, spoofing attack is most dangerous type of interference where produces GNSS like signals and fool receiver without interrupting GNSS operations where receiver navigation system is not able to do any counter measures until the fatal point. Positioning unit for all applications are not immune to this kind of attacks. Form a general perspective, a positioning unit is made of several sensors providing the actual position information, with the GNSS sensor playing a core role, being usually the only one providing an absolute estimation of the position, and others aiding or refining such information

Technology of fabrication of CdS

Heterojunction between Si and CdSxTe1-x have been obtained by the method of vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si – n/CdSxTe1-x heterostructure are calculated