9 research outputs found

    Ge-diode detector combined with crystal-diffraction spectrometer permits high-resolution gamma ray spectroscopy

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    Crystal-diffraction spectrometer, combined with a lithium-drifted Ge-diode detector, performs high-resolution gamma ray spectroscopy on the complicated neutron-capture gamma ray spectra. The system is most useful in the 1-3 MeV energy range and improves the signal to background ratio

    Turbulence and passive scalar transport in a free-slip surface

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    We consider the two-dimensional (2D) flow in a flat free-slip surface that bounds a three-dimensional (3D) volume in which the flow is turbulent. The equations of motion for the two-dimensional flow in the surface are neither compressible nor incompressible but strongly influenced by the 3D flow underneath the surface. The velocity correlation functions in the 2D surface and in the 3D volume scale with the same exponents. In the viscous subrange the amplitudes are the same, but in the inertial subrange the 2D one is reduced to 2/3 of the 3D amplitude. The surface flow is more strongly intermittent than the 3D volume flow. Geometric scaling theory is used to derive a relation between the scaling of the velocity field and the density fluctuations of a passive scalar advected on the surface.Comment: 11 pages, 10 Postscript figure

    Turbulence in a free surface

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    We report an experimental and numerical study of turbulent fluid motion in a free surface. The flow is realized experimentally on the surface of a tank filled with water stirred by a vertically oscillating grid positioned well below the surface. Particles floating on the surface are used to visualize the flow. The effect of surface waves appears to be negligible. The flow is unconventional in that it is confined to two dimensions but does not have squared vorticity as a conservation law, that it is not divergence free and that it inherits scaling features of the mean square velocity differences S_2(R) and the vorticity fluctuations Omega(R) from the bulk 3-d turbulence.Comment: 4 pages, 4 Postscript figure

    Statistical Treatment of Damage Factors for Semiconductor Devices

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    Average Silicon Neutron Displacement Kerma Factor at 1 MeV

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    A Survey of Nonrotational States of Deformed Odd- A

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