3,279 research outputs found

    Duality in Perturbation Theory and the Quantum Adiabatic Approximation

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    Duality is considered for the perturbation theory by deriving, given a series solution in a small parameter, its dual series with the development parameter being the inverse of the other. A dual symmetry in perturbation theory is identified. It is then shown that the dual to the Dyson series in quantum mechanics is given by a recent devised series having the adiabatic approximation as leading order. A simple application of this result is given by rederiving a theorem for strongly perturbed quantum systems.Comment: 9 pages, revtex. Improved english and presentation. Final version accepted for publication by Physical Review

    Localization in a strongly disordered system: A perturbation approach

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    We prove that a strongly disordered two-dimensional system localizes with a localization length given analytically. We get a scaling law with a critical exponent is ν=1\nu=1 in agreement with the Chayes criterion ν≥1\nu\ge 1. The case we are considering is for off-diagonal disorder. The method we use is a perturbation approach holding in the limit of an infinitely large perturbation as recently devised and the Anderson model is considered with a Gaussian distribution of disorder. The localization length diverges when energy goes to zero with a scaling law in agreement to numerical and theoretical expectations.Comment: 5 pages, no figures. Version accepted for publication on International Journal of Modern Physics

    The capability of capacitive sensors in the monitoring relative humidity in hypogeum environments

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    Hypogeum environments are characterized by high levels of relative humidity (RH). Most humidity sensors currently in use are based on the capacitive effect of the dielectric material to change according to water vapour uptake. In hypogeum environments the dielectric material can be saturated by water vapor, implying a significant error in the RH measurement. To improve the capacity of this type of humidity sensors, a modified hygrometer capacitive sensor, which uses a heating cycle to avoid the condensation, has been recently developed by Rotronic®. During four field campaigns in two different hypogea environments (the Monkey Tomb in Siena and the Mithreum of Caracalla Baths in Rome), RH was measured using the conventional capacitive sensor (CCS) and the heated capacitive sensor (HCS). The purpose of this study was to investigate the capability of HCS to detect RH variations when the environmental conditions were close to vapor saturation. Significant differences were found between the measurements of the two sensors: when RH was close to 100%, the CCS was not able to detect the RH decrease, giving only a measure of RH=100%, while HCS detected such a RH decrease. Therefore, these results encourage the use of HCS in the monitoring of RH levels in extreme humidity sites such as hypogea sites

    Photospheric and chromospheric activity in four young solar-type stars

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    We present a photometric and spectroscopic study of four G-K dwarfs, namely HD 166, epsilon Eri, chi1 Ori and kappa1 Cet. In three cases, we find a clear spatial association between photospheric and chromospheric active regions. For chi1 Ori we do not find appreciable variations of photospheric temperature, and chromospheric Halpha emission. We applied a spot/plage model to the observed rotational modulation of temperature and flux to derive spot/plage parameters and to reconstruct a rough three-dimensional map of the outer atmosphere of kappa1 Cet, HD 166 and epsilon Eri.Comment: 12 pages, 3 tables, 9 figures. Submitted to Ap

    Accretion, disks, and magnetic activity in the TW Hya association

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    We present new photometric and spectroscopic data for the M-type members of the TW Hya association with the aim of a comprehensive study of accretion, disks and magnetic activity at the critical age of ~10 Myr where circumstellar matter disappears.Comment: 4 pages, to appear in Proceedings IAU Symposium No. 314, Young Stars & Planets Near the Sun, 201

    Neutron and gamma irradiation effects on power semiconductor switches

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    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation
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