DOCKING PROBLEMS: PROTEIN-LIGAND LOW ENERGY MINIMA ANALYSIS-

17-1

Search for the Cryptoexotic Member of the Baryon Antidecuplet 1/2+ in the Reactions pi- p --> pi- p and pi- p --> K L

The main goal of this proposal is the search for a narrow cryptoexotic nucleon resonance by scanning of the pi- p system invariant mass in the region (1610-1770) MeV with the detection of pi- p and K Lambda decays. The scan is supposed to be done by the variation of the incident pi- momentum and its measurement with the accuracy of up to +-0.1% (better than 1 MeV in terms of the invariant mass in the whole energy range) with a set of proportional chambers located in the first focus of the magnetooptical channel. High sensitivity of the method to the resonance under search is shown. The secondary particles scattered from a liquid hydrogen target are detected by sets of the wire drift chambers equipped with modern electronics. The time scale of the project is about 3 years. The budget estimate including manpower, the apparatus and operation cost, is about 40 million rubles. The beam time required is (4-6) two week runs on "high" (10 GeV/c) flattop of the ITEP proton synchrotron.Comment: 16 pages, 10 figures. v2: an acknowledge adde

A luminescence study of Cu2ZnSnSe4/Mo/glass films and solar cells with near stoichiometric copper content

Cu2ZnSnSe4 (CZTSe) is one of the leading candidates for the absorber layer in sustainable solar cells. Thin films of CZTSe with a near stoichiometric [Cu]/[Zn  +  Sn] were used to produce solar cells with conversion efficiency η  =  6.4% by a standard solar cell processing including KCN etching and the deposition of CdS and ZnO. Both CZTSe films and solar cells were examined using photoluminescence (PL) to analyse the nature of radiative recombination and photoluminescence excitation (PLE) at 4.2 K to determine the bandgap (E g ). Low temperature PL spectra of the films reveal an intense band P1 at 0.81 eV and a low intensity band P2 at 0.93 eV. Their temperature and excitation intensity dependencies suggest that they both involve recombinations of free electrons with holes localised at acceptors with the energy level influenced by potential fluctuations in the valence band. We associate P1 and P2 with different fractions of CZTSe: with a lower and higher degree of order of Cu and Zn on the cation sub-lattice, respectively. Device processing reduced the intensity of P1 by 2.5 whereas the intensity of P2 increased by a 1.5. We assign this to a low temperature annealing due to CdS and ZnO deposition which increased the fraction of CZTSe with high degree of Cu/Zn order and decreased the fraction with low degree of Cu/Zn order. Device processing increased E g , blue shifted P1, decreased its width, j-shift and the mean depth of potential fluctuations. These can also be related to the annealing and/or KCN etching and the chemical effect of Cd, due to CdS replacing copper at the CdS-CZTSe interface layer. Processing induced a new broad band P3 at 1.3 eV (quenching with E a = 200 meV) which we attributed to defects in the CdS layer

Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass

The effect of solar cell processing (including etching in KCN along with deposition of CdS and ZnO) on photoluminescence (PL) spectra and bandgap Eg (measured at 4.2 K by photoluminescence excitation) of Cu2ZnSnSe4 films, produced by selenising metallic precursors at 450 °C, 500 °C and 550 °C, was studied. Temperature and excitation intensity analysis of the P1 dominant band in the PL spectra of solar cells suggests that after processing this band still can be assigned to the free-to-bound recombination of free electrons with holes bound at deep acceptor levels influenced by valence band-tails. However processing increased the intensity of P1 and blue shifted it. The strongest effect was observed for the film selenised at 500 °C. For the film selenised at 450 °C the blue shift and increase in the intensity were smaller and only a slight intensity rise was found for the film selenised at 550 °C. The intensity increase we assign to a reduction in the concentration of non-radiative recombination centers on the surface because of the etching and changes in doping due to inter-diffusion of Cd, S, Se and Zn after the deposition of CdS. Such an inter-diffusion depends on the elemental composition of the films defining the chemistry of defects and influencing Eg which increased in the film selenised at 500 °C but decreased in the other films. Processing increased the P1 shift rate (j-shift) with excitation power change in all the films demonstrating a higher compensation degree in the solar cells which is consistent with the formation of an interface layer containing new donors CdCu

Backward asymmetry measurements in the elastic pion-proton scattering at resonance energies

The asymmetry parameter P was measured for the elastic pion-proton scattering in the very backward angular region of theta_cm ~ 150-170^o at several pion beam energies in the invariant mass range containing most of the pion-proton resonances. The general goal of the experimental program was to provide new data for partial wave analyses in order to resolve their uncertainties in the baryon resonance region to allow the unambiguous baryon spectrum reconstructions. Until recently the parameter P was not measured in the examined domain that might be explained by the extremely low cross section. At the same time the predictions of various partial wave analyses are far from agreement in some kinematic areas and specifically those areas were chosen for the measurements where the disagreement is most pronouncing. The experiment was performed at the ITEP U-10 proton synchrotron, Moscow, by the ITEP-PNPI collaboration in the latest 5 years.Comment: 6 pages, 5 figures. to be submitted to the European Physical Journa