Biexcitons in two-dimensional systems with spatially separated electrons and holes

The binding energy and wavefunctions of two-dimensional indirect biexcitons are studied analytically and numerically. It is proven that stable biexcitons exist only when the distance between electron and hole layers is smaller than a certain critical threshold. Numerical results for the biexciton binding energies are obtained using the stochastic variational method and compared with the analytical asymptotics. The threshold interlayer separation and its uncertainty are estimated. The results are compared with those obtained by other techniques, in particular, the diffusion Monte-Carlo method and the Born-Oppenheimer approximation.Comment: 11 pages, 7 figure

Collection of indirect excitons in a diamond-shaped electrostatic trap

We report on the principle and realization of a new trap for excitons -- the diamond electrostatic trap -- which uses a single electrode to create a confining potential for excitons. We also create elevated diamond traps which permit evaporative cooling of the exciton gas. We observe collection of excitons towards the trap center with increasing exciton density. This effect is due to screening of disorder in the trap by the excitons. As a result, the diamond trap behaves as a smooth parabolic potential which realizes a cold and dense exciton gas at the trap center.Comment: 4 Pages, 5 figure

Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile

We show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, we carry out experiments and modeling of infrared spectromicroscopy of poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a relatively low resistance of the gate insulators. We conclude that the mobility of P3HT has a power-law density dependence, which is consistent with the activated transport in disorder-induced tails of the density of states.Comment: 3+ pages, 2 figure

Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices

We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results are consistent with the model, which attributes the LDT to the interaction-induced percolation of the exciton gas through the external potential. We also discuss applications of the lattice potentials for estimating the strength of disorder and exciton interaction.Comment: 4 pages, 4 figure