1,649 research outputs found
Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices
We discuss methods for imaging the nonequilibrium spin polarization of
electrons in Fe/GaAs spin transport devices. Both optically- and
electrically-injected spin distributions are studied by scanning
magneto-optical Kerr rotation microscopy. Related methods are used to
demonstrate electrical spin detection of optically-injected spin polarized
currents. Dynamical properties of spin transport are inferred from studies
based on the Hanle effect, and the influence of strain on spin transport data
in these devices is discussed.Comment: 5 pages, 6 figs. ICPS-28 proceedings (July'06, Vienna) for J. Appl.
Phy
Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance
A distinguishing feature of spin accumulation in ferromagnet-semiconductor
devices is precession of the non-equilibrium spin population of the
semiconductor in a magnetic field. This is the basis for detection techniques
such as the Hanle effect, but these approaches become less effective as the
spin lifetime in the semiconductor decreases. For this reason, no electrical
Hanle measurement has been demonstrated in GaAs at room temperature. We show
here that by forcing the magnetization in the ferromagnet (the spin injector
and detector) to precess at the ferromagnetic resonance frequency, an
electrically generated spin accumulation can be detected from 30 to 300 K. At
low temperatures, the distinct Larmor precession of the spin accumulation in
the semiconductor can be detected by ferromagnetic resonance in an oblique
field. We verify the effectiveness of this new spin detection technique by
comparing the injection bias and temperature dependence of the measured spin
signal to the results obtained using traditional methods. We further show that
this new approach enables a measurement of short spin lifetimes (< 100 psec), a
regime that is not accessible in semiconductors using traditional Hanle
techniques.Comment: 4 figure
Spin injection from perpendicular magnetized ferromagnetic -MnGa into (Al,Ga)As heterostructures
Electrical spin injection from ferromagnetic -MnGa into an (Al,Ga)As
p-i-n light emitting diode (LED) is demonstrated. The -MnGa layers show
strong perpendicular magnetocrystalline anisotropy, enabling detection of spin
injection at remanence without an applied magnetic field. The bias and
temperature dependence of the spin injection are found to be qualitatively
similar to Fe-based spin LED devices. A Hanle effect is observed and
demonstrates complete depolarization of spins in the semiconductor in a
transverse magnetic field.Comment: 4 pages, 3 figure
Onset of Superfluidity in 4He Films Adsorbed on Disordered Substrates
We have studied 4He films adsorbed in two porous glasses, aerogel and Vycor,
using high precision torsional oscillator and DC calorimetry techniques. Our
investigation focused on the onset of superfluidity at low temperatures as the
4He coverage is increased. Torsional oscillator measurements of the 4He-aerogel
system were used to determine the superfluid density of films with transition
temperatures as low as 20 mK. Heat capacity measurements of the 4He-Vycor
system probed the excitation spectrum of both non-superfluid and superfluid
films for temperatures down to 10 mK. Both sets of measurements suggest that
the critical coverage for the onset of superfluidity corresponds to a mobility
edge in the chemical potential, so that the onset transition is the bosonic
analog of a superconductor-insulator transition. The superfluid density
measurements, however, are not in agreement with the scaling theory of an onset
transition from a gapless, Bose glass phase to a superfluid. The heat capacity
measurements show that the non-superfluid phase is better characterized as an
insulator with a gap.Comment: 15 pages (RevTex), 21 figures (postscript
- …