Modulated phases in magnetic models frustrated by long-range interactions

We study an Ising model in one dimension with short range ferromagnetic and long range (power law) antiferromagnetic interactions. We show that the zero temperature phase diagram in a (longitudinal) field H involves a sequence of up and down domains whose size varies continuously with H, between -H_c and H_c which represent the edge of the ferromagnetic up and down phases. The implications of long range interaction in many body systems are discussed.Comment: 5 pages, 3 figure

Quantum Griffiths Singularities in the Transverse-Field Ising Spin Glass

We report a Monte Carlo study of the effects of {\it fluctuations} in the bond distribution of Ising spin glasses in a transverse magnetic field, in the {\it paramagnetic phase} in the $T\to 0$ limit. Rare, strong fluctuations give rise to Griffiths singularities, which can dominate the zero-temperature behavior of these quantum systems, as originally demonstrated by McCoy for one-dimensional ($d=1$) systems. Our simulations are done on a square lattice in $d=2$ and a cubic lattice in $d=3$, for a gaussian distribution of nearest neighbor (only) bonds. In $d=2$, where the {\it linear} susceptibility was found to diverge at the critical transverse field strength $\Gamma_c$ for the order-disorder phase transition at T=0, the average {\it nonlinear} susceptibility $\chi_{nl}$ diverges in the paramagnetic phase for $\Gamma$ well above $\Gamma_c$, as is also demonstrated in the accompanying paper by Rieger and Young. In $d=3$, the linear susceptibility remains finite at $\Gamma_c$, and while Griffiths singularity effects are certainly observable in the paramagnetic phase, the nonlinear susceptibility appears to diverge only rather close to $\Gamma_c$. These results show that Griffiths singularities remain persistent in dimensions above one (where they are known to be strong), though their magnitude decreases monotonically with increasing dimensionality (there being no Griffiths singularities in the limit of infinite dimensionality).Comment: 20 pages, REVTEX, 6 eps figures included using the epsf macros; to appear in Phys. Rev.

Radiative-Recoil Corrections of Order α(Zα)5(m/M)m\alpha(Z\alpha)^5(m/M)m to Lamb Shift Revisited

The results and main steps of an analytic calculation of radiative-recoil corrections of order $\alpha(Z\alpha)^5(m/M)m$ to the Lamb shift in hydrogen are presented. The calculations are performed in the infrared safe Yennie gauge. The discrepancy between two previous numerical calculations of these corrections existing in the literature is resolved. Our new result eliminates the largest source of the theoretical uncertainty in the magnitude of the deuterium-hydrogen isotope shift.Comment: 14 pages, REVTE

Exchange coupling between silicon donors: the crucial role of the central cell and mass anisotropy

Donors in silicon are now demonstrated as one of the leading candidates for implementing qubits and quantum information processing. Single qubit operations, measurements and long coherence times are firmly established, but progress on controlling two qubit interactions has been slower. One reason for this is that the inter donor exchange coupling has been predicted to oscillate with separation, making it hard to estimate in device designs. We present a multivalley effective mass theory of a donor pair in silicon, including both a central cell potential and the effective mass anisotropy intrinsic in the Si conduction band. We are able to accurately describe the single donor properties of valley-orbit coupling and the spatial extent of donor wave functions, highlighting the importance of fitting measured values of hyperfine coupling and the orbital energy of the $1s$ levels. Ours is a simple framework that can be applied flexibly to a range of experimental scenarios, but it is nonetheless able to provide fast and reliable predictions. We use it to estimate the exchange coupling between two donor electrons and we find a smoothing of its expected oscillations, and predict a monotonic dependence on separation if two donors are spaced precisely along the [100] direction.Comment: Published version. Corrected b and B values from previous versio

Hopping Conduction in Uniaxially Stressed Si:B near the Insulator-Metal Transition

Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of temperature and stress, the conductivity collapses onto a single universal scaling curve. For large values of the argument, the scaling function is well fit by the exponentially activated form associated with variable range hopping when electron-electron interactions cause a soft Coulomb gap in the density of states at the Fermi energy. The temperature dependence of the prefactor, corresponding to the T-dependence of the critical curve, has been determined reliably for this system, and is proportional to the square-root of T. We show explicitly that nevlecting the prefactor leads to substantial errors in the determination of the scaling parameters and the critical exponents derived from them. The conductivity is not consistent with Mott variable-range hopping in the critical region nor does it obey this form for any range of the parameters. Instead, for smaller argument of the scaling function, the conductivity of Si:B is well fit by an exponential form with exponent 0.31 related to the critical exponents of the system at the metal- insulator transition.Comment: 13 pages, 6 figure

An Assessment of Indian Information Technology Companies Listed on National Stock Exchange by Pearls Analysis: An Analytical Study

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Decision support system in financial statistics for banking industries

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