73 research outputs found

    Material growth and characterization for solid state devices

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    Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers

    Material growth and characterization directed toward improving III-V heterojunction solar cells

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    In addition to the existing materials growth laboratory, the photolithographic facility and the device testing facility were completed. The majority of equipment for data acquisition, solar cell testing, materials growth and device characterization were received and are being put into operation. In the research part of the program, GaAs and GaA1As layers were grown reproducibly on GaAs substrates. These grown layers were characterized as to surface morphology, thickness and thickness uniformity. The liquid phase epitaxial growth process was used to fabricate p-n junctions in Ga(1-x)A1(x)As. Sequential deposition of two alloy layers was accomplished and detailed analysis of the effect of substrate quality and dopant on the GaA1As layer quality is presented. Finally, solar cell structures were formed by growing a thin p-GaA1As layer upon an epitaxial n-GaA1As layer. The energy gap corresponding to the long wavelength cutoff of the spectral response characteristic was 1.51-1.63 eV. Theoretical calculations of the spectral response were matched to the measured response

    Practices in child growth monitoring in the countries of the Eastern Mediterranean Region

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    ABSTRACT Growth reference charts are among the most sensitive and valuable tools for assessing the health and development of children. A questionnaire survey was answered by 16 of the 21 ministries of health in the Eastern Mediterranean Region countries (EMR) about their use of growth charts for children under 5 years. Most of the countries (13/16) used the NCHS/WHO charts and weight-for-age was the most commonly used. Charts for height-for-age and head circumference-for-age were less commonly used. Problems in the use of charts were identified

    Clinical Outcomes in 3343 Children and Adults with Rheumatic Heart Disease from 14 Low and Middle Income Countries: 2-Year Follow-up of the Global Rheumatic Heart Disease Registry (the REMEDY study)

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    Background: There are few contemporary data on the mortality and morbidity associated with rheumatic heart disease or information on their predictors. We report the 2-year follow-up of individuals with rheumatic heart disease from 14 low- and middle-income countries in Africa and Asia. Methods: Between January 2010 and November 2012, we enrolled 3343 patients from 25 centers in 14 countries and followed them for 2 years to assess mortality, congestive heart failure, stroke or transient ischemic attack, recurrent acute rheumatic fever, and infective endocarditis. Results: Vital status at 24 months was known for 2960 (88.5%) patients. Two-thirds were female. Although patients were young (median age, 28 years; interquartile range, 18–40), the 2-year case fatality rate was high (500 deaths, 16.9%). Mortality rate was 116.3/1000 patient-years in the first year and 65.4/1000 patient-years in the second year. Median age at death was 28.7 years. Independent predictors of death were severe valve disease (hazard ratio [HR], 2.36; 95% confidence interval [CI], 1.80–3.11), congestive heart failure (HR, 2.16; 95% CI, 1.70–2.72), New York Heart Association functional class III/IV (HR, 1.67; 95% CI, 1.32–2.10), atrial fibrillation (HR, 1.40; 95% CI, 1.10–1.78), and older age (HR, 1.02; 95% CI, 1.01–1.02 per year increase) at enrollment. Postprimary education (HR, 0.67; 95% CI, 0.54–0.85) and female sex (HR, 0.65; 95% CI, 0.52–0.80) were associated with lower risk of death. Two hundred and four (6.9%) patients had new congestive heart failure (incidence, 38.42/1000 patient-years), 46 (1.6%) had a stroke or transient ischemic attack (8.45/1000 patient-years), 19 (0.6%) had recurrent acute rheumatic fever (3.49/1000 patient-years), and 20 (0.7%) had infective endocarditis (3.65/1000 patient-years). Previous stroke and older age were independent predictors of stroke/transient ischemic attack or systemic embolism. Patients from low- and lower-middle–income countries had significantly higher age- and sex-adjusted mortality than patients from upper-middle–income countries. Valve surgery was significantly more common in upper-middle–income than in lower-middle– or low-income countries. Conclusions: Patients with clinical rheumatic heart disease have high mortality and morbidity despite being young; those from low- and lower-middle–income countries had a poorer prognosis associated with advanced disease and low education. Programs focused on early detection and the treatment of clinical rheumatic heart disease are required to improve outcomes. </jats:sec
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