Semiconductor A3B5 nanostructures for infrared femtosecond lasers

Two techniques were suggested and tested for the recovery time shortening of saturable absorbers on a base of A3B5 compounds including quantum wells. The first one, proposed by authors, is the sample post-growth treatment by UV laser radiation; it implied generation of point defects, which, in its turn, led to electron-hole recombination acceleration and to recovery time shortening by an order of magnitude and more. Another technique based on special design of barriers gave promising results for the fast saturable absorbers. Semiconductor mirrors designed for Yb3+:KY(WO4)2 infrared laser mode locking led to 115 fs stable modelocking regime with average power close to CW operation. Results on fast saturable absorbers for spectral region of 1500 nm are also presented

BONE SEVERE FORM OF HYPERPARATHYROIDISM IN A PATIENT WITH ADENOMA OF PARATHYROID GLAND

Hyperparathyroidism is one of the most common endocrinopathies. This disease leads to a violation of phosphorus-calcium metabolism and the washing out of calcium from bone tissue. Breach of the skeleton’s structure in hyperparathyroidism is often mistaken for metastatic bone damage, which leads to incorrect treatment tactics. In this work we present the clinical observation of a patient with an adenoma of the parathyroid gland and a severe bone form of hyperparathyroidism. Multiple lesions of bones with destruction of the cortical layer and the presence of the softtissue component were initially regarded as metastases in the bone. However, the morphological pattern of bone foci, as well as an elevated level of calcium and parathyroid hormone, made it possible to diagnose the bony form of hyperparathyroidism. The search for the cause of hyperparathyroidism revealed a tumor in the projection of the right lower parathyroid gland. Surgical removal of parathyroid adenoma led to the normalization of the level of calcium and parathyroid hormone. The article presents data of laboratory-instrumental methods of research and the results of surgical treatment of a patient

Semiconductor A(3)B(5) nanostructures for infrared femtosecond lasers

Two techniques were suggested and tested for the recovery time shortening of saturable absorbers on a base of A3B5 compounds including quantum wells. The first one, proposed by authors, is the sample post-growth treatment by UV laser radiation; it implied generation of point defects, which, in its turn, led to electron-hole recombination acceleration and to recovery time shortening by an order of magnitude and more. Another technique based on special design of barriers gave promising results for the fast saturable absorbers. Semiconductor mirrors designed for Yb3+:KY(WO4)2 infrared laser mode locking led to 115 fs stable modelocking regime with average power close to CW operation. Results on fast saturable absorbers for spectral region of 1500 nm are also presente