839 research outputs found
Terahertz dynamics of a topologically protected state: quantum Hall effect plateaus near cyclotron resonance in a GaAs/AlGaAs heterojunction
We measure the Hall conductivity of a two-dimensional electron gas formed at
a GaAs/AlGaAs heterojunction in the terahertz regime close to the cyclotron
resonance frequency by employing a highly sensitive Faraday rotation method
coupled with electrical gating of the sample to change the electron density. We
observe clear plateau-and step-like features in the Faraday rotation angle vs.
electron density and magnetic field (Landau-level filling factor), which are
the high frequency manifestation of quantum Hall plateaus - a signature of
topologically protected edge states. The results are compared to a recent
dynamical scaling theory.Comment: 18 pages, 3 figure
Exciton Diamagnetic Shifts and Valley Zeeman Effects in Monolayer WS and MoS to 65 Tesla
We report circularly-polarized optical reflection spectroscopy of monolayer
WS and MoS at low temperatures (4~K) and in high magnetic fields to
65~T. Both the A and the B exciton transitions exhibit a clear and very similar
Zeeman splitting of approximately 230~eV/T (), providing
the first measurements of the valley Zeeman effect and associated -factors
in monolayer transition-metal disulphides. These results complement and are
compared with recent low-field photoluminescence measurements of valley
degeneracy breaking in the monolayer diselenides MoSe and WSe. Further,
the very large magnetic fields used in our studies allows us to observe the
small quadratic diamagnetic shifts of the A and B excitons in monolayer WS
(0.32 and 0.11~eV/T, respectively), from which we calculate exciton
radii of 1.53~nm and 1.16~nm. When analyzed within a model of non-local
dielectric screening in monolayer semiconductors, these diamagnetic shifts also
constrain and provide estimates of the exciton binding energies (410~meV and
470~meV for the A and B excitons, respectively), further highlighting the
utility of high magnetic fields for understanding new 2D materials.Comment: 9 pages, 5 figure
Magneto-Optics of Exciton Rydberg States in a Monolayer Semiconductor
We report 65 tesla magneto-absorption spectroscopy of exciton Rydberg states
in the archetypal monolayer semiconductor WSe. The strongly field-dependent
and distinct energy shifts of the 2s, 3s, and 4s excited neutral excitons
permits their unambiguous identification and allows for quantitative comparison
with leading theoretical models. Both the sizes (via low-field diamagnetic
shifts) and the energies of the exciton states agree remarkably well with
detailed numerical simulations using the non-hydrogenic screened Keldysh
potential for 2D semiconductors. Moreover, at the highest magnetic fields the
nearly-linear diamagnetic shifts of the weakly-bound 3s and 4s excitons provide
a direct experimental measure of the exciton's reduced mass, .Comment: To appear in Phys. Rev. Lett. Updated version (25 jan 2018) now
includes detailed supplemental discussion of Landau levels, Rydberg exciton
energies, exciton mass, Dirac Hamiltonian, nonparabolicity, and dielectric
effect
Magneto-reflection spectroscopy of monolayer transition-metal dichalcogenide semiconductors in pulsed magnetic fields
We describe recent experimental efforts to perform polarization-resolved
optical spectroscopy of monolayer transition-metal dichalcogenide
semiconductors in very large pulsed magnetic fields to 65 tesla. The
experimental setup and technical challenges are discussed in detail, and
temperature-dependent magneto-reflection spectra from atomically thin tungsten
disulphide (WS) are presented. The data clearly reveal not only the valley
Zeeman effect in these 2D semiconductors, but also the small quadratic exciton
diamagnetic shift from which the very small exciton size can be directly
inferred. Finally, we present model calculations that demonstrate how the
measured diamagnetic shifts can be used to constrain estimates of the exciton
binding energy in this new family of monolayer semiconductors.Comment: PCSI-43 conference (Jan. 2016; Palm Springs, CA
Hole-LO phonon interaction in InAs/GaAs quantum dots
We investigate the valence intraband transitions in p-doped self-assembled
InAs quantum dots using far-infrared magneto-optical technique with polarized
radiation. We show that a purely electronic model is unable to account for the
experimental data. We calculate the coupling between the mixed hole LO-phonon
states using the Fr\"ohlich Hamiltonian, from which we determine the polaron
states as well as the energies and oscillator strengths of the valence
intraband transitions. The good agreement between the experiments and
calculations provides strong evidence for the existence of hole-polarons and
demonstrates that the intraband magneto-optical transitions occur between
polaron states
Revealing exciton masses and dielectric properties of monolayer semiconductors with high magnetic fields
In semiconductor physics, many essential optoelectronic material parameters
can be experimentally revealed via optical spectroscopy in sufficiently large
magnetic fields. For monolayer transition-metal dichalcogenide semiconductors,
this field scale is substantial --tens of teslas or more-- due to heavy carrier
masses and huge exciton binding energies. Here we report absorption
spectroscopy of monolayer MoS, MoSe, MoTe, and WS in very high
magnetic fields to 91~T. We follow the diamagnetic shifts and valley Zeeman
splittings of not only the exciton's ground state but also its excited
, , ..., Rydberg states. This provides a direct experimental
measure of the effective (reduced) exciton masses and dielectric properties.
Exciton binding energies, exciton radii, and free-particle bandgaps are also
determined. The measured exciton masses are heavier than theoretically
predicted, especially for Mo-based monolayers. These results provide essential
and quantitative parameters for the rational design of opto-electronic van der
Waals heterostructures incorporating 2D semiconductors.Comment: updated; now also including data on MoTe2. Accepted & in press,
Nature Commu
Electrical control of orbital and vibrational interlayer coupling in bi- and trilayer 2H−MoS2
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