Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations

The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p(6) nl n'l' dielectronic recombination (DR) resonances associated with 3s to nl core excitations, 2s 2p(6) 3s nl n'l' resonances associated with 2s to nl (n=3,4) core excitations, and 2p(5) 3s nl n'l' resonances associated with 2p to nl (n=3,...,infinity) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s to 3p n'l' and 3s to 3d n'l' (both n'=3,...,6) and 2p(5) 3s 3l n'l' (n'=3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.Comment: 13 pages, 9 figures, 3 tables. Accepted for publication in Physical Review

Anisotropic fragmentation in low-energy dissociative recombination

On a dense energy grid reaching up to 75 meV electron collision energy the fragmentation angle and the kinetic energy release of neutral dissociative recombination fragments have been studied in a twin merged beam experiment. The anisotropy described by Legendre polynomials and the extracted rotational state contributions were found to vary on a likewise narrow energy scale as the rotationally averaged rate coefficient. For the first time angular dependences higher than 2$^{nd}$ order could be deduced. Moreover, a slight anisotropy at zero collision energy was observed which is caused by the flattened velocity distribution of the electron beam.Comment: 8 pages, 4 figures; The Article will be published in the proceedings of DR 2007, a symposium on Dissociative Recombination held in Ameland, The Netherlands (18.-23. July 2008); Reference 19 has been published meanwhile in S. Novotny, PRL 100, 193201 (2008

Giant Terahertz Photoconductance of Quantum Point Contacts in the Tunneling Regime

We report on the observation of the giant photoconductance of a quantum point contact (QPC) in the tunneling regime excited by terahertz radiation. Studied QPCs are formed in a GaAs/(Al, Ga) As heterostructure with a high-electron-mobility two-dimensional electron gas. We demonstrate that irradiation of strongly negatively biased QPCs by laser radiation with frequency f = 0.69 THz and intensity 50mW/cm(2) results in two orders of magnitude enhancement of the QPC conductance. The effect increases with the dark conductivity decrease. It is also characterized by a strong polarization dependence and a drastic reduction of the signal by increasing the radiation frequency to 1.63 THz. We demonstrate that all experimental findings can be well explained by the photon-assisted tunneling through the QPC. Corresponding calculations are in good agreement with the experiment