6 research outputs found
β‑Alkyl substituted Dithieno[2,3‑<i>d</i>;2′,3′<i>-d</i>′]benzo[1,2‑<i>b</i>;4,5‑<i>b</i>′]dithiophene Semiconducting Materials and Their Application to Solution-Processed Organic Transistors
A novel highly π-extended heteroacene with four
symmetrically
fused thiophene-ring units and solubilizing substituents at the terminal
β-positions on the central ring, dithienoÂ[2,3-<i>d</i>;2′,3′<i>-d</i>′]ÂbenzoÂ[1,2-<i>b</i>;4,5-<i>b</i>′]Âdithiophene (DTBDT) was
synthesized via intramolecular electrophilic coupling reaction. The
α-positions availability in the DTBDT motif enables the preparation
of solution-processable DTBDT-based polymers such as <b>PDTBDT</b>, <b>PDTBDT-BT</b>, <b>PDTBDT-DTBT</b>, and <b>PDTBDT-DTDPP</b>. Even with its highly extended acene-like π-framework, all
polymers show fairly good environmental stability of their highest
occupied molecular orbitals (HOMOs) from −5.21 to −5.59
eV. In the course of our study to assess a profile of semiconductor
properties, field-effect transistor performance of the four DTBDT-containing
copolymers via solution-process is characterized, and <b>PDTBDT-DTDPP</b> exhibits the best electrical performance with a hole mobility of
1.70 × 10<sup>–2</sup> cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>. <b>PDTBDT-DTDPP</b> has a relatively
smaller charge injection barrier for a hole from the gold electrodes
and maintains good coplanarity of the polymer backbone, indicating
the enhanced π–π stacking characteristic and charge
carrier transport. The experimental results demonstrate that our molecular
design strategy for air-stable, high-performance organic semiconductors
is highly promising
Solution-Processable Ambipolar Diketopyrrolopyrrole–Selenophene Polymer with Unprecedentedly High Hole and Electron Mobilities
There is a fast-growing demand for polymer-based ambipolar
thin-film transistors (TFTs), in which both <i>n</i>-type
and <i>p</i>-type transistor operations are realized in
a single layer, while maintaining simplicity in processing. Research
progress toward this end is essentially fueled by molecular engineering
of the conjugated backbones of the polymers and the development of
process architectures for device fabrication, which has recently led
to hole and electron mobilities of more than 1.0 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>. However, ambipolar polymers
with even higher performance are still required. By taking into account
both the conjugated backbone and side chains of the polymer component,
we have developed a dithienyl-diketopyrrolopyrrole (TDPP) and selenophene
containing polymer with hybrid siloxane-solubilizing groups (<b>PTDPPSe-Si</b>). A synergistic combination of rational polymer
backbone design, side-chain dynamics, and solution processing affords
an enormous boost in ambipolar TFT performance, resulting in unprecedentedly
high hole and electron mobilities of 3.97 and 2.20 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, respectively
Boosting the Ambipolar Performance of Solution-Processable Polymer Semiconductors via Hybrid Side-Chain Engineering
Ambipolar polymer semiconductors
are highly suited for use in flexible,
printable, and large-area electronics as they exhibit both <i>n</i>-type (electron-transporting) and <i>p</i>-type
(hole-transporting) operations within a single layer. This allows
for cost-effective fabrication of complementary circuits with high
noise immunity and operational stability. Currently, the performance
of ambipolar polymer semiconductors lags behind that of their unipolar
counterparts. Here, we report on the side-chain engineering of conjugated,
alternating electron donor–acceptor (D–A) polymers using
diketopyrrolopyrrole-selenophene copolymers with hybrid siloxane-solubilizing
groups (<b>PTDPPSe-Si</b>) to enhance ambipolar performance.
The alkyl spacer length of the hybrid side chains was systematically
tuned to boost ambipolar performance. The optimized three-dimensional
(3-D) charge transport of <b>PTDPPSe-Si</b> with pentyl spacers
yielded unprecedentedly high hole and electron mobilities of 8.84
and 4.34 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, respectively. These results provide guidelines for the molecular
design of semiconducting polymers with hybrid side chains
Requirements for Forming Efficient 3‑D Charge Transport Pathway in Diketopyrrolopyrrole-Based Copolymers: Film Morphology vs Molecular Packing
To
achieve extremely high planarity and processability simultaneously,
we have newly designed and synthesized copolymers composed of donor
units of 2,2′-(2,5-dialkoxy-1,4-phenylene)ÂdithienoÂ[3,2-<i>b</i>]Âthiophene (TT-P-TT) and acceptor units of diketopyrrolopyrrole
(DPP). These copolymers consist of a highly planar backbone due to
intramolecular interactions. We have systematically investigated the
effects of intermolecular interactions by controlling the side chain
bulkiness on the polymer thin-film morphologies, packing structures,
and charge transport. The thin-film microstructures of the copolymers
are found to be critically dependent upon subtle changes in the intermolecular
interactions, and charge transport dynamics of the copolymer based
field-effect transistors (FETs) has been investigated by in-depth
structure–property relationship study. Although the size of
the fibrillar structures increases as the bulkiness of the side chains
in the copolymer increases, the copolymer with the smallest side chain
shows remarkably high charge carrier mobility. Our findings reveal
the requirement for forming efficient 3-D charge transport pathway
and highlight the importance of the molecular packing and interdomain
connectivity, rather than the crystalline domain size. The results
obtained herein demonstrate the importance of tailoring the side chain
bulkiness and provide new insights into the molecular design for high-performance
polymer semiconductors
Ambipolar Semiconducting Polymers with <i>Ï€-</i>Spacer Linked Bis-Benzothiadiazole Blocks as Strong Accepting Units
Recognizing the importance of molecular
coplanarity and with the
aim of developing new, ideal strong acceptor-building units in semiconducting
polymers for high-performance organic electronics, herein we present
a simplified single-step synthesis of novel vinylene- and acetylene-linked
bis-benzothiadiazole (<b>VBBT</b> and <b>ABBT</b>) monomers
with enlarged planarity relative to a conventionally used acceptor,
benzothiadiazole (BT). Along these lines, four polymers (<b>PDPP-VBBT</b>, <b>PDPP-ABBT</b>, <b>PIID-VBBT</b>, and <b>PIID-ABBT</b>) incorporating either <b>VBBT</b> or <b>ABBT</b> moieties
are synthesized by copolymerizing with centro-symmetric ketopyrrole
cores, such as diketopyrrolopyrrole (DPP) and isoindigo (IID), and
their electronic, physical, and transistor properties are studied.
These polymers show relatively balanced ambipolar transport, and <b>PDPP-VBBT</b> yields hole and electron mobilities as high as 0.32
and 0.13 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, respectively. Interestingly, the acetylenic linkages lead to enhanced
electron transportation in ketopyrrole-based polymers, showing a decreased
threshold voltage and inverting voltage in the transistor and inverter
devices, respectively. The IID-based BBT polymers exhibit the inversion
of the dominant polarity depending on the type of unsaturated carbon
bridge. Owing to their strong electron-accepting ability and their
highly π-extended and planar structures, <b>VBBT</b> and <b>ABBT</b> monomers should be extended to the rational design of
high-performance polymers in the field of organic electronics
Flexible FET-Type VEGF Aptasensor Based on Nitrogen-Doped Graphene Converted from Conducting Polymer
Graphene-based field-effect transistors (FETs) have been developed rapidly and are currently considered as an alternative for postsilicon electronics. In this study, polypyrrole-converted nitrogen-doped few-layer graphene (PPy-NDFLG) was grown on Cu substrate by chemical vapor deposition combined with vapor deposition polymerization and then transferred onto a flexible substrate. Furthermore, antivascular endothelial growth factor (VEGF) RNA aptamer conjugated PPy-NDFLG was integrated into a liquid-ion gated FET geometry to fabricate a high-performance VEGF aptamer-based sensor. Field-induced high sensitivity was observed for the analyte-binding events, eventually leading to the recognition of the target molecules at an unprecedentedly low concentration (100 fM). Additionally, the aptasensor had excellent reusability, mechanical bendability, and durability in the flexible process. The developed methodology describes, for the first time, the fabrication of N-doped graphene using conducting polymers including heteroatoms in their structures as the carbonization precursor and demonstrates its use in a high-performance, flexible FET-type aptasensor to detect vascular endothelial growth factor as a cancer biomarker