Markedly enhanced intratumoral spread and antitumor effect of oncolytic adenovirus expressing decorin

With the aim of improving viral distribution and tumor penetration, we have engineered decorin expressing replication-incompetent (dl-LacZ-DCNG) and -competent (Ad-[DELTA]E1B-DCNG) adenoviruses. In both tumor spheroids and established solid tumors in vivo, administration of dl-LacZ-DCNG resulted in greater transduction efficiency and viral spread throughout the tumor mass. Ad-[DELTA]E1B-DCNG also enhanced viral distribution and tumor spread, leading to an increased anti-tumor effect and survival advantage. Upon histological analysis, Ad-[DELTA]E1B-DCNG also elicited greater percentage of apoptotic cells and extensive necrosis compared to those from untreated or control virus-treated tumors. Furthermore, Ad-[DELTA]E1B-DCNG substantially decreased extracellular matrix components within the tumor tissue, while normal tissue adjacent to the tumor was not affected. Finally, intratumoral administration of Ad-[DELTA]E1B-DCNG did not enhance but inhibited the formation of pulmonary metastases of B16BL6 melanoma cells in mice. Taken together, these data demonstrate the utility of decorin as a dispersion agent and suggest its utility and potential in improving the efficacy of replicating adenovirus-mediated cancer gene therapy

Ir d-band Derived Superconductivity in the Lanthanum-Iridium System LaIr3

The electronic properties of the heavy metal superconductor LaIr3 are reported. The estimated superconducting parameters obtained from physical properties measurements indicate that LaIr3 is a BCS-type superconductor. Electronic band structure calculations show that Ir d- states dominate the Fermi level. A comparison of electronic band structures of LaIr3 and LaRh3 shows that the Ir-compound has a strong spin-orbit-coupling effect, which creates a complex Fermi surface.Comment: 6 pages and 5 figure

Investigation of the SH3BP2 Gene Mutation in Cherubism

Cherubism is a rare developmental lesion of the jaw that is generally inherited as an autosomal dominant trait. Recent studies have revealed point mutations in the SH3BP2 gene in cherubism patients. In this study, we examined a 6-year-old Korean boy and his family. We found a Pro418Arg mutation in the SH3BP2 gene of the patient and his mother. A father and his 30-month-old younger brother had no mutations. Immunohistochemically, the multinucleated giant cells proved positive for CD68 and tartrate-resistant acid phosphatase (TRAP). Numerous spindle-shaped stromal cells expressed a ligand for receptor activator of nuclear factor kB (RANKL), but not in multinucleated giant cells. These results provide evidence that RANKL plays a critical role in the differentiation of osteoclast precursor cells to multinucleated giant cells in cherubism. Additionally, genetic analysis may be a useful method for differentiation of cherubism.</p

Heisenberg-picture approach to the exact quantum motion of a time-dependent forced harmonic oscillator

In the Heisenberg picture, the generalized invariant and exact quantum motions are found for a time-dependent forced harmonic oscillator. We find the eigenstate and the coherent state of the invariant and show that the dispersions of these quantum states do not depend on the external force. Our formalism is applied to several interesting cases.Comment: 15 pages, two eps files, to appear in Phys. Rev. A 53 (6) (1996

A 0.5 μm Thick Polysilicon Schottky Diode with Rectification Ratio of 10^6

Polycrystalline Si films, 0.5-mm thick, were obtained as a result of metal-induced growth by sputtering from a Si target on 25 nm thick Ni prelayers at 525 °C. Silicon grew heteroepitaxially on the NiSi2 layer formed due to the reaction between the sputtered Si atoms and Ni. Schottky diodes were fabricated on the Si films by deposition of a Schottky metal on the front surface of the film while Ni disilicide provided an intimate ohmic contact at the back. A Pd/n-Si diode using an n-Si film annealed for 2 h at 700 °C in forming gas demonstrated a rectification ratio of 106, while an as-deposited p-Si film provided an Al/p-Si diode with rectification of five orders of magnitude. Schottky barrier properties are briefly discussed