Epitaxial designs for maximizing efficiency in resonant tunnelling diode based terahertz emitters

We discuss the modelling of high current density InGaAs/AlAs/InP resonant tunneling diodes to maximize their efficiency as THz emitters. A figure of merit which contributes to the wall plug efficiency, the intrinsic resonator efficiency, is used for the development of epitaxial designs. With the contribution of key parameters identified, we analyze the limitations of accumulated stress to assess the manufacturability of such designs. Optimal epitaxial designs are revealed, utilizing thin barriers, with a wide and shallow quantum well that satisfies the strained layer epitaxy constraint. We then assess the advantages to epitaxial perfection and electrical characteristics provided by devices with a narrow InAs sub-well inside a lattice-matched InGaAs alloy. These new structures will assist in the realization of the next-generation submillimeter emitters

Characterisation of High Current Density Resonant Tunneling Diodes for THz Emission Using Photoluminescence Spectroscopy

We discuss the numerical simulation of high current density InGaAs/AlAs/InP resonant tunneling diodes with a view to their optimization for application as THz emitters. We introduce a figure of merit based upon the ratio of maximum extractable THz power and the electrical power developed in the chip. The aim being to develop high efficiency emitters as output power is presently limited by catastrophic failure. A description of the interplay of key parameters follows, with constraints on strained layer epitaxy introduced. We propose an optimized structure utilizing thin barriers paired with a comparatively wide quantum well that satisfies strained layer epitaxy constraints

Molecular Clouds as Cosmic Ray Laboratories

We will here discuss how the gamma-ray emission from molecular clouds can be used to probe the cosmic ray flux in distant regions of the Galaxy and to constrain the highly unknown cosmic ray diffusion coefficient. In particular we will discuss the GeV to TeV emission from runaway cosmic rays penetrating molecular clouds close to young and old supernova remnants and in molecular clouds illuminated by the background cosmic ray flux.Comment: to appear on Proceedings of 25th Texas Symposium on Relativistic Astrophysic

Probing a ferromagnetic critical regime using nonlinear susceptibility

The second order para-ferromagnetic phase transition in a series of amorphous alloys (Fe{_5}Co{_{50}}Ni{_{17-x}}Cr{_x}B{_{16}}Si{_{12}}) is investigated using nonlinear susceptibility. A simple molecular field treatment for the critical region shows that the third order suceptibility (chi{_3}) diverges on both sides of the transition temperature, and changes sign at T{_C}. This critical behaviour is observed experimentally in this series of amorphous ferromagnets, and the related assymptotic critical exponents are calculated. It is shown that using the proper scaling equations, all the exponents necessary for a complete characterization of the phase transition can be determined using linear and nonlinear susceptiblity measurements alone. Using meticulous nonlinear susceptibility measurements, it is shown that at times chi{_3} can be more sensitive than the linear susceptibility (chi{_1}) in unravelling the magnetism of ferromagnetic spin systems. A new technique for accurately determining T{_C} is discussed, which makes use of the functional form of chi{_3} in the critical region.Comment: 11 Figures, Submitted to Physical Review

Self-similar solutions for the emergence of energy varying shock waves from plane-parallel atmospheres

We present a self-similar solution to describe the propagation of a shock wave whose energy is deposited or lost at the front. Both of the propagation of the shock wave in a medium having a power-law density profile and the expansion of the medium to a vacuum after the shock breakout are described with a Lagrangian coordinate. The Chapman-Jouguet detonation is found to accelerate the medium most effectively. The results are compared with some numerical simulations in the literature. We derive the fractions of the deposited/lost energy at the shock front in some specific cases, which will be useful when applying this solution to actual phenomena.Comment: 8 pages, 7 figures, to appear in Ap

Non-destructive characterization of thin layer resonant tunnelling diodes

We present an advanced nondestructive characterization scheme for high current density AlAs/InGaAs resonant tunneling diodes pseudomorphically grown on InP substrates. We show how low-temperature photoluminescence spectroscopy (LT-PL) and high-resolution X-ray diffractometry (HR-XRD) are complementary techniques to increase the confidence of the characterized structure. The lattice-matched InGaAs is characterized and found to be of high quality. We discuss the inclusion of an undoped “copy” well (C-well) in terms of enhancements to HR-XRD and LT-PL characterization and quantify the improved precision in determining the structure. As a consequence of this enhanced precision in the determination of physical structure, the AlAs barriers and quantum well (QW) system are found to contain nonideal material interfaces. Their roughness is characterized in terms of the full width to half-maximum of the split LT-PL emission peaks, revealing a ±1 atomic sheet variance to the QW width. We show how barrier asymmetry can be detected through fitting of both optical spectra and HR-XRD rocking curves

Cultural modulation of face and gaze scanning in young children

Previous research has demonstrated that the way human adults look at others’ faces is modulated by their cultural background, but very little is known about how such a culture-specific pattern of face gaze develops. The current study investigated the role of cultural background on the development of face scanning in young children between the ages of 1 and 7 years, and its modulation by the eye gaze direction of the face. British and Japanese participants’ eye movements were recorded while they observed faces moving their eyes towards or away from the participants. British children fixated more on the mouth whereas Japanese children fixated more on the eyes, replicating the results with adult participants. No cultural differences were observed in the differential responses to direct and averted gaze. The results suggest that different patterns of face scanning exist between different cultures from the first years of life, but differential scanning of direct and averted gaze associated with different cultural norms develop later in life

Fabrication, Characterisation, and Epitaxial Optimisation of MOVPE-Grown Resonant Tunnelling Diode THz Emitters

Resonant tunnelling diodes (RTDs) are a strong candidate for future wireless communications in the THz region, offering compact, room-temperature operation with Gb/s transfer rates. We employ the InGaAs/AlAs/InP material system, offering advantages due to high electron mobility, suitable band-offsets, and low resistance contacts. We describe an RTD emitter operating at 353GHz, radiating in this atmospheric transmittance window through a slot antenna. The fabrication scheme uses a dual-pass technique to achieve reproducible, very low resistivity, ohmic contacts, followed by accurate control of the etched device area. The top contact connects the device via the means of an air bridge. We then proceed to model ways to increase the resonator efficiency, in turn improving the radiative efficiency, by changing the epitaxial design. The optimization takes into account the accumulated stress limitations and realities of reactor growth. Due to the absence of useful in-situ monitoring in commercially-scalable metal-organic vapour phase epitaxy (MOVPE), we have developed a robust non-destructive epitaxial characterisation scheme to verify the quality of these mechanically shallow and atomically thin devices. A dummy copy of the active region element is grown to assist with low temperature photoluminescence spectroscopy (LTPL) characterisation. The resulting linewidths limits the number of possible solutions of quantum well (QW) width and depth pairs. In addition, the doping levels can be estimated with a sufficient degree of accuracy by measuring the Moss-Burstein shift of the bulk material. This analysis can then be combined with high resolution X-ray diffractometry (HRXRD) to increase its accuracy

A 5'-region polymorphism modulates promoter activity of the tumor suppressor gene MFSD2A

<p>Abstract</p> <p>Background</p> <p>The MFSD2A gene maps within a linkage disequilibrium block containing the MYCL1-<it>EcoRI </it>polymorphism associated with prognosis and survival in lung cancer patients. Survival discrepancies between Asians and Caucasians point to ethnic differences in allelic frequencies of the functional genetic variations.</p> <p>Results</p> <p>Analysis of three single-nucleotide polymorphisms (SNPs) mapping in the MFSD2A 5'-regulatory region using a luciferase reporter system showed that SNP rs12072037, in linkage disequilibrium with the MYCL1-<it>EcoRI </it>polymorphism and polymorphic in Asians but not in Caucasians, modulated transcriptional activity of the MFSD2A promoter in cell lines expressing AHR and ARNT transcription factors, which potentially bind to the SNP site.</p> <p>Conclusion</p> <p>SNP rs12072037 modulates MFSD2A promoter activity and thus might affect MFSD2A levels in normal lung and in lung tumors, representing a candidate ethnically specific genetic factor underlying the association between the MYCL1 locus and lung cancer patients' survival.</p

Resonant Tunnelling Diodes for Next Generation THz Systems

Resonant tunnelling diodes (RTDs) are a strong candidate for future wireless communications in the THz spectrum (sub-millimetre waves), offering compact, roomtemperature operation with the potential to exceed the bit transfer rate mandated by the 12G-SDI standard, using a single wireless link. A free-space RTD emitter operating at 353GHz is described. The fabrication process consists of a dual-pass I-line photolithography &amp; etch technique using an air bridge, allowing low resistivity ohmic contacts, and accurate control of desired device area. With extrinsic circuit elements taken into account, the intrinsic semiconductor efficiency is analysed to investigate structural improvements for radiative efficiency. Such optimised structures are presented, and then characterised after being epitaxially grown with commercially viable metal-organic vapour phase epitaxy (MOVPE) reactors. A combination of low temperature photoluminescence spectroscopy, X-Ray diffractometry, and transmission electron microscopy attest the quality of the new material. We end with a suggestion for the next steps to exceed technological readiness levels of 8, and use monolithic RTD emitters as components in new systems