Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

Abstract-This letter reports AlGaN/GaN high-electron mobility transistors with capless activation annealing of implanted Si for nonalloyed ohmic contacts. Source and drain areas were implanted with an Si dose of 1 × 10 16 cm −2 and were activated at ∼ 1260 • C in a metal-organic chemical vapor deposition system in ammonia and nitrogen at atmospheric pressure. Nonalloyed ohmic contacts to ion-implanted devices showed a contact resistance of 0.96 Ω · mm to the channel. An output power density of 5 W/mm was measured at 4 GHz, with 58% power-added efficiency and a gain of 11.7 dB at a drain bias of 30 V

Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

This letter reports AlGaN/GaN high-electron mobility transistors with capless activation annealing of implanted Si for nonalloyed ohmic contacts. Source and drain areas were implanted with an Si dose of I x 10(16) cm(-2) and were activated at similar to 1260 degrees C in a metal-organic chemical vapor deposition system in ammonia and nitrogen at atmospheric pressure. Nonalloyed ohmic contacts to ion-implanted devices showed a contact resistance of 0.96 Omega (.) mm to the channel. An output power density of 5 W/mm was measured at 4 GHz, with 58% power-added efficiency and a gain of 11.7 dB at a drain bias of 30 V

Unpassivated high power deeply recessed GaNHEMTs with fluorine-plasma surface treatment

In this letter, unpassivated high power deeply recessed GaN-based high electron mobility transistors (HEMTs) are reported. The introduction of a thick graded AlGaN cap layer and a novel fluorine-plasma surface treatment reduced the gate-leakage current and increased breakdown voltage significantly, enabling the application of much higher drain biases. Due to excellent dispersion suppression achieved at an epitaxial level, an output power density of more than 17 W/mm with an associated power added efficiency (PAE) of 50% was measured at 4 GHz and V-DS = 80 V without SiNx passivation. These results demonstrate the great potential of this novel epitaxial approach for passivation-free GaN-based HEMTs for high-power applications