36 research outputs found

    Photoinduced Electron Spin Resonance Phenomenon in α

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    The photoinduced phenomenon in α-Cr2O3 nanoscaled spherical particles was investigated in the temperature range of 150 up to 315 K. An X-band electron-spin resonance spectrometry was employed to probe the magnetic behavior in α-Cr2O3 under an IR illumination in the nanosecond regime. The photoinduced effect on both low and high field ESR signals appears above 280 K and is remarkably enhanced just below Néel temperature TN. Such a photoinduced ESR phenomenon disappears in a reproducible way in the paramagnetic insulating state which occurs above TN of crystalline α-Cr2O3. In the antiferromagnetic phase, that is, below TN, the shift of the low field absorption could be attributed to the interaction of the light with specific Cr3+ ions located in strongly distorted sites correlated to strong ligand-field effect

    From Khoi-San indigenous knowledge to bioengineered CeO2 nanocrystals to exceptional UV-blocking green nanocosmetics

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    Single phase CeO2 nanocrystals were bio-synthesized using Hoodia gordonii natural extract as an effective chelating agent. The nanocrystals with an average diameter of 〈Ø〉 ~ 5–26 nm with 4+ electronic valence of Ce displayed a remarkable UV selectivity and an exceptional photostability. The diffuse reflectivity profile of such CeO2 exhibited a unique UV selectivity, in a form of a Heaviside function-like type profile in the solar spectrum. While the UV reflectivity is significantly low; within the range of 0.7%, it reaches 63% in the VIS and NIR. Their relative Reactive Oxygen Species (ROS) production was found to be < 1 within a wide range of concentration (0.5–1000 μg/ml). This exceptional photostability conjugated to a sound UV selectivity opens a potential horizon to a novel family of green nano-cosmetics by green nano-processing

    Competitive growth texture of pulse laser deposited VO2 nanostructures on a glass substrate

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    We report on the crystal structure and morphology of vanadium dioxide (VO2) nanostructures synthesized by pulsed laser deposition on soda-lime glass substrates. The VO2 nanostructures exhibit sharp a-axis diffraction peaks, characteristic of the VO2 monoclinic phase, which implies that highly a-axis textured VO2 was formed. A detailed description of the growth mechanisms and the substrate–film interaction is given, and the characteristics of the electronic transition and hysteresis of the phase transition are described in terms of the morphology and grain boundary structure. The sharpness of the transition and the hysteresis upon heating and cooling are found to be strong functions of the crystal structure and microstructure (grain size and shape).UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, INRS (Canada), the ICTP-Trieste and the NANOAFNET.http://www.elsevier.com/locate/actamathb2014ai201

    Effect of substrate temperature on the structure and the metal insulator transition in pulsed laser deposed V02\ films on soda lime glass

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    In this paper, we report the effect of soda lime substrate deposition temperature (Ts) on the crystal structure and the metal insulator transition of VO2 thin films. Samples were deposited at substrate deposition temperature ranging from 450 to 600 0C by pulsed-laser deposition and characterized by x-ray diffraction and UV-VIS spectrophotometer. At a substrate temperature of 550°C, the VO2 (100) reflection dominate the spectrum showing a change in crystalline grains orientation. The highest transition temperatures of 74 oC with the lowest hysteresis width of 11 oC were obtained on the same sample grown at a substrate deposition temperature of 500 oC and also corresponding to the largest grains size of a value of 350 nm.http://link.springer.com/journal/125962016-03-31hb201

    Single-phase α-Cr 2

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    Investigation of the Thermal Stability of a Solar Absorber Processed through a Hydrothermal Technique

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    In this work, we study the thermal stability of a hydrothermally treated stainless steel (SS) selective solar absorber by annealing in air in a temperature range between 300 °C and 700 °C for a soaking time of 2 h. Thermal stability testing in the presence of air is critical if the vacuum is breached. Therefore, the SS was characterized by X-ray diffraction (XRD), mechanical, and optical techniques. The XRD analysis shows that the grain size of the as-treated absorber is 67 nm, whereas those of the annealed absorbers were found to be in the range between 66 and 38 nm. The phase of the as-treated and annealed SS was further identified by XRD as Fe2O3. The EDS result shows that the elemental components of the SS were C, Cr, Fe, and O. The strain (ε) and stress (σ) calculated for the as-treated absorber are 1.2 × 10−1 and −2.9 GPa, whereas the annealed absorbers are found in the range of 4.4 × 10−1 to 5.2 × 10−1 and −121.6 to −103.2 GPa, respectively, at 300–700 °C. The as-treated SS absorbers exhibit a good spectra selectivity of 0.938/0.431 = 2.176, which compares with 0.941/0.403 = 2.335 after being annealed at 300 °C and 0.884/0.179 = 4.939 after being annealed at 700 °C. These results indicate a small improvement in absorptivity (0.941) and emissivity (0.403) after annealing at 300 °C, followed by a significant decrease after annealing at 700 °C. The obtained analysis confirms that the annealed SS absorber exhibits excellent selectivity and is suitable to withstand any thermal condition (≤700 °C) in air. Thus, using a cost-effective approach as demonstrated in this study, the as-treated and annealed SS absorber could be used for photo-thermal conversion applications

    Investigation of the Thermal Stability of a Solar Absorber Processed through a Hydrothermal Technique

    No full text
    In this work, we study the thermal stability of a hydrothermally treated stainless steel (SS) selective solar absorber by annealing in air in a temperature range between 300 &deg;C and 700 &deg;C for a soaking time of 2 h. Thermal stability testing in the presence of air is critical if the vacuum is breached. Therefore, the SS was characterized by X-ray diffraction (XRD), mechanical, and optical techniques. The XRD analysis shows that the grain size of the as-treated absorber is 67 nm, whereas those of the annealed absorbers were found to be in the range between 66 and 38 nm. The phase of the as-treated and annealed SS was further identified by XRD as Fe2O3. The EDS result shows that the elemental components of the SS were C, Cr, Fe, and O. The strain (&epsilon;) and stress (&sigma;) calculated for the as-treated absorber are 1.2 &times; 10&minus;1 and &minus;2.9 GPa, whereas the annealed absorbers are found in the range of 4.4 &times; 10&minus;1 to 5.2 &times; 10&minus;1 and &minus;121.6 to &minus;103.2 GPa, respectively, at 300&ndash;700 &deg;C. The as-treated SS absorbers exhibit a good spectra selectivity of 0.938/0.431 = 2.176, which compares with 0.941/0.403 = 2.335 after being annealed at 300 &deg;C and 0.884/0.179 = 4.939 after being annealed at 700 &deg;C. These results indicate a small improvement in absorptivity (0.941) and emissivity (0.403) after annealing at 300 &deg;C, followed by a significant decrease after annealing at 700 &deg;C. The obtained analysis confirms that the annealed SS absorber exhibits excellent selectivity and is suitable to withstand any thermal condition (&le;700 &deg;C) in air. Thus, using a cost-effective approach as demonstrated in this study, the as-treated and annealed SS absorber could be used for photo-thermal conversion applications

    Growth of graphene underlayers by chemical vapor deposition

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    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth

    Pulsed laser deposited Cr2O3 nanostructured thin film on graphene as anode material for lithium-ion batteries

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    Pulsed laser deposition technique was used to deposit Cr2O3 nanostructured thin film on a chemical vapour deposited few-layer graphene (FLG) on nickel (Ni) substrate for application as anode material for lithium-ion batteries. The experimental results show that graphene can effectively enhance the electrochemical property of Cr2O3. For Cr2O3 thin film deposited on Ni (Cr2O3/Ni), a discharge capacity of 747.8 mA h g-1 can be delivered during the first lithiation process. After growing Cr2O3 thin film on FLG/Ni, the initial discharge capacity of Cr2O3/FLG/Ni was improved to 1234.5 mA h g-1. The reversible lithium storage capacity of the as-grown material is 692.2 mA h g-1 after 100 cycles, which is much higher than that of Cr2O3/Ni (111.3 mA h g-1). This study reveals the differences between the two material systems and emphasizes the role of the graphene layers in improving the electrochemical stability of the Cr2O3 nanostructured thin film.This work was sponsored within the framework of the UNESCO UNISA Africa Chair in Nanosciences & Nanotechnology and the Nanosciences African Network (NANOAFNET) by the National Research Foundation of South Africa, the African Laser Centre (ALC), the University of South Arica (UNISA) in collaboration with the Vice-Chancellor of the University of Pretoria, the National Research Foundation (NRF) of South Africa, iThemba LABS and the Abdus Salam ICTP-Trieste, Italy.http://www.elsevier.com/locate/jalcom2016-07-31hb2016Physic
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