Electron-Phonon energy relaxation time in thin strongly disordered titanium nitride films

We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τeph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T-3 temperature dependence, which are consistent with values of τeph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor

The electron-phonon relaxation time in thin superconducting titanium nitride films

We report on the direct measurement of the electron-phonon relaxation time, ?eph, in disordered TiN films. Measured values of ?eph are from 5.5?ns to 88?ns in the 4.2 to 1.7?K temperature range and consistent with a T?3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.QN/Quantum NanoscienceApplied Science