Imaging and manipulation of skyrmion lattice domains in Cu2OSeO3

Nanoscale chiral skyrmions in noncentrosymmetric helimagnets are promising binary state variables in high-density, low-energy nonvolatile memory. Skyrmions are ubiquitous as an ordered, single-domain lattice phase, which makes it difficult to write information unless they are spatially broken up into smaller units, each representing a bit. Thus, the formation and manipulation of skyrmion lattice domains is a prerequisite for memory applications. Here, using an imaging technique based on resonant magnetic x-ray diffraction, we demonstrate the mapping and manipulation of skyrmion lattice domains in Cu2OSeO3. The material is particularly interesting for applications owing to its insulating nature, allowing for electric field-driven domain manipulation.Comment: 4 pages, 3 figure

Ultrahigh magnetic field spectroscopy reveals the band structure of the 3D topological insulator Bi2_2Se3_3

We have investigated the band structure at the $\Gamma$ point of the three-dimensional (3D) topological insulator Bi$_2$Se$_3$ using magneto-spectroscopy over a wide range of energies ($0.55-2.2$\,eV) and in ultrahigh magnetic fields up to 150\,T. At such high energies ($E>0.6$\,eV) the parabolic approximation for the massive Dirac fermions breaks down and the Landau level dispersion becomes nonlinear. At even higher energies around 0.99 and 1.6 eV, new additional strong absorptions are observed with a temperature and magnetic-field dependence which suggest that they originate from higher band gaps. Spin orbit splittings for the further lying conduction and valence bands are found to be 0.196 and 0.264 eV

Strain in epitaxial MnSi films on Si(111) in the thick film limit studied by polarization-dependent extended x-ray absorption fine structure

We report a study of the strain state of epitaxial MnSi films on Si(111) substrates in the thick film limit (100-500~\AA) as a function of film thickness using polarization-dependent extended x-ray absorption fine structure (EXAFS). All films investigated are phase-pure and of high quality with a sharp interface between MnSi and Si. The investigated MnSi films are in a thickness regime where the magnetic transition temperature $T_\mathrm{c}$ assumes a thickness-independent enhanced value of $\geq$43~K as compared with that of bulk MnSi, where $T_\mathrm{c} \approx 29~{\rm K}$. A detailed refinement of the EXAFS data reveals that the Mn positions are unchanged, whereas the Si positions vary along the out-of-plane [111]-direction, alternating in orientation from unit cell to unit cell. Thus, for thick MnSi films, the unit cell volume is essentially that of bulk MnSi --- except in the vicinity of the interface with the Si substrate (thin film limit). In view of the enhanced magnetic transition temperature we conclude that the mere presence of the interface, and its specific characteristics, strongly affects the magnetic properties of the entire MnSi film, even far from the interface. Our analysis provides invaluable information about the local strain at the MnSi/Si(111) interface. The presented methodology of polarization dependent EXAFS can also be employed to investigate the local structure of other interesting interfaces.Comment: 11 pages, 10 figure

Reciprocal space mapping of magnetic order in thick epitaxial MnSi films

We report grazing incidence small angle neutron scattering (GISANS) and complementary off-specular neutron reflectometry (OSR) of the magnetic order in a single-crystalline epitaxial MnSi film on Si(111) in the thick film limit. Providing a means of direct reciprocal space mapping, GISANS and OSR reveal a magnetic modulation perpendicular to the films under magnetic fields parallel and perpendicular to the film, where additional polarized neutron reflectometry (PNR) and magnetization measurements are in excellent agreement with the literature. Regardless of field orientation, our data does not suggest the presence of more complex spin textures, notably the formation of skyrmions. This observation establishes a distinct difference with bulk samples of MnSi of similar thickness under perpendicular field, in which a skyrmion lattice dominates the phase diagram. Extended x-ray absorption fine structure measurements suggest that small shifts of the Si positions within the unstrained unit cell control the magnetic state, representing the main difference between the films and thin bulk samples

Three-dimensional structure of magnetic skyrmions

Magnetic skyrmions (skyrmions hereafter) are magnetization configurations, whose topological robustness and nanoscale size have led to speculation that they could find use as a next-generation information carrier. Skyrmions have been observed in magnetic multilayer materials that are thin compared to the radius of a skyrmion, and chiral cubic single crystals that can be far larger than any characteristic skyrmion scale. In these single crystals, one would expect that skyrmions could exhibit interesting three-dimensional (3D) characteristics. Here, the symmetry of the micromagnetic free energy is investigated. This symmetry permits a complex 3D modulation of a skyrmion string, which we show to be a requirement of a skyrmion coexisting with the conical state. We discuss the implications of this modulation with respect to Thiele\u27s equation and interskyrmion interactions. Further to this internal modulation, we study theoretically and show experimentally that the strings themselves must contort towards the surfaces of their confining crystals

Robust Perpendicular Skyrmions and their Surface-Confinement

Magnetic skyrmions are two-dimensional magnetization swirls that stack in the form of tubes in the third dimension and which are proposed as prospective information carriers for nonvolatile memory devices due to their unique topological properties. From resonant elastic X-ray scattering measurements on Cu2OSeO3 with an in-plane magnetic field, we find that a state of perpendicularly ordered skyrmions forms, in stark contrast to the well-studied bulk state. The surface state is stable over a wide temperature range, unlike the bulk state in out-of-plane fields which is confined to a narrow region of the temperature-field phase diagram. In contrast to ordinary skyrmions found in the bulk, the surface state skyrmions result from the presence of magnetic interactions unique to the surface which stabilize them against external perturbations. The surface guiding makes the robust state particular interesting for racetracklike devices, ultimately allowing for much higher storage densities due to the smaller lateral footprint of the perpendicular skyrmions

Proximity-Induced Odd-Frequency Superconductivity in a Topological Insulator

At an interface between a topological insulator (TI) and a conventional superconductor (SC), superconductivity has been predicted to change dramatically and exhibit novel correlations. In particular, the induced superconductivity by an $s$-wave SC in a TI can develop an order parameter with a $p$-wave component. Here we present experimental evidence for an unexpected proximity-induced novel superconducting state in a thin layer of the prototypical TI, Bi$_2$Se$_3$, proximity coupled to Nb. From depth-resolved magnetic field measurements below the superconducting transition temperature of Nb, we observe a local enhancement of the magnetic field in Bi$_2$Se$_3$ that exceeds the externally applied field, thus supporting the existence of an intrinsic paramagnetic Meissner effect arising from an odd-frequency superconducting state. Our experimental results are complemented by theoretical calculations supporting the appearance of such a component at the interface which extends into the TI. This state is topologically distinct from the conventional Bardeen-Cooper-Schrieffer state it originates from. To the best of our knowledge, these findings present a first observation of bulk odd-frequency superconductivity in a TI. We thus reaffirm the potential of the TI-SC interface as a versatile platform to produce novel superconducting states.Comment: Accepted version for publication in Physical Review Letter