Simulation of tunnel junction in cascade solar cell (GaAs/Ge) using AMPS-1D

The development of the tunnel junction interconnect was key the first two-terminal monolithic, multijunction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge). This solar cell cascade was simulated when using one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varying thickness of tunnel junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V) characteristics and quantum efficiency (QE)

Numerical simulation of graded band gap GaAs/AlGaAs heterojunction solar cell by AMPS-1D

The conduction band discontinuity or spike in an abrupt heterojunction p+ GaAs / NAl0.4 Ga0.6As solar cell can hinder the separation of hole-electron by electric field. This paper analyzes the GaAs /AlxGa1-xAs/Al0.4Ga0.6As based solar cell performance by AMPS-1D numerical modeling. The affect of graded band gap region in the interface between the emitter (GaAs) and base (Al0.4Ga0.6As) on the solar cell’s performance is investigated. Among the factors studied are thickness of graded band gap region, thickness of emitter layer of the cells. In this study, a width 0.14µm has been required to eliminate the spike and improved the performance of solar cell. Keywords: heterojunction solar cell; graded band gap; AMPS-1D

The Role of Mirror Dichroic in Tandem Solar Cell GaAs/Si

The good choice of the mirror dichroic between two solar cells was key to the development of the first two-terminal monolithic, multi-junction solar cell. In this paper describes a simulation for mirror dichroic between the first cell (GaAs) and second cell (Si ). In the simulation, Spectrum of the mirror Issued to first cell is changed the 0.3 ?m to0.6 ?m and the rest of the spectrum turns to the second cell. the By varying the mirror dichroic was demonstrate in the form of current-voltage(I-V) characteristics and quantum efficiency (QE). Keywords: multi-junction, mirror dichroic, quantum efficiency

Effect of Temperature on the AlGaAs/GaAs Tandem Solar Cell for Concentrator Photovoltaic Performances

Multijunction solar cells for concentrator photovoltaic (CPV) systems have attracted increasing attention in recent years for their very high conversion efficiencies. But there is a problem in this type of solar cells (CPV) is to increase the temperature if it has been augmenting the concentration ratio. In this paper, we studied the effect of the concentration photovoltaic in a high-efficiency double-junction devices solar cell on temperature solar cell and its impact on the photocurrent, the efficiency and open circuit voltage. In this study, the top cell is made of AlGaAs (1.73 eV) while the bottom cell is made of GaAs (1.42 eV) between them a tunnel junction

The Effect of Graded Band Gap Structure Inserted in the Multijunction Solar Cell

We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-graded junction AlGaAs/GaInAs device, which can be experimentally fabricated. By optimizing the band-gap combination of the considered structure, an improvement of conversion efficiency has been observed in comparison to the conventional AlGaAs/GaInAs system. For the suggested graded band-gap combination, our calculation indicates that the attainable efficiency can be enhanced up to 34% ( AM1.5d). Keywords: band gap gradient, multijunction solar cells, AlGaAs, GaInA

Simulation of tunnel junction in cascade solar cell (GaAs/Ge) using AMPS-1D

The development of the tunnel junction interconnect was key the first two-terminal monolithic, multijunction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge). This solar cell cascade was simulated when using one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varying thickness of tunnel junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V) characteristics and quantum efficiency (QE)

Effect of Temperature on the AlGaAs/GaAs Tandem Solar Cell for Concentrator Photovoltaic Performances

Multijunction solar cells for concentrator photovoltaic (CPV) systems have attracted increasing attention in recent years for their very high conversion efficiencies. But there is a problem in this type of solar cells (CPV) is to increase the temperature if it has been augmenting the concentration ratio. In this paper, we studied the effect of the concentration photovoltaic in a high-efficiency double-junction devices solar cell on temperature solar cell and its impact on the photocurrent, the efficiency and open circuit voltage. In this study, the top cell is made of AlGaAs (1.73 eV) while the bottom cell is made of GaAs (1.42 eV) between them a tunnel junction

Modeling of Tunnel Junction (GaAs) in the Cascade Solar Cell

In this paper describes a simple model for tunnel junction (GaAs) between the top cell (GaAs) and bottom cell (Ge) of cascade solar cells. We theoretically studied the electrical characteristics (IV) of GaAs tunnel diode with the accounting program MATLAB for doping concentration of the junction after Using this model between two cascaded solar cell (GaAs / Ge) and we calculate the electrical characteristics and performance using AMPS-1D software. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance