Optical alignment and polarization conversion of neutral exciton spin in individual InAs/GaAs quantum dots

We investigate exciton spin memory in individual InAs/GaAs self-assembled quantum dots via optical alignment and conversion of exciton polarization in a magnetic field. Quasiresonant phonon-assisted excitation is successfully employed to define the initial spin polarization of neutral excitons. The conservation of the linear polarization generated along the bright exciton eigenaxes of up to 90% and the conversion from circular- to linear polarization of up to 47% both demonstrate a very long spin relaxation time with respect to the radiative lifetime. Results are quantitatively compared with a model of pseudo-spin 1/2 including heavy-to-light hole mixing.Comment: 5 pages, 3 figure

LEAFY COTYLEDON1, FUSCA3 expression and auxin treatment in relation to somatic embryogenesis induction in Arabidopsis

The expression pattern of the LEC1 and FUS3 genes during somatic embryogenesis in Arabidopsis explants (immature zygotic embryos) induced in vitro was analysed, using Real-time quantitative PCR (qRT-PCR). The analysis revealed differential expression of LEC1 but not FUS3 within a 30 day time course of somatic embryo development, and a significant auxin-dependent upregulation of LEC1 was found over the time course. In contrast to embryogenic culture, the level of LEC1 and FUS3 expression was noticeably lower in non-embryogenic callus of Col-0 and hormonal mutants (cbp20 and axr4-1) with low SE-efficiency. In addition, the expression profile of LEC1 and FUS3 was followed in the embryogenic culture derived from 35S::LEC2-GR explants. A significant increase of LEC1 but not FUS3 activity was observed under LEC2 overexpression induced in auxin-treated explants. The work provides further experimental evidence on LEC gene involvement in the embryogenic response in Arabidopsis somatic cells, and also implicates LEC1 function in more advanced stages of SE culture in relation to somatic embryo differentiation and development

Optical manipulation of a single Mn spin in a CdTe-based quantum dot

A system of two coupled CdTe quantum dots, one of them containing a single Mn ion, was studied in continuous wave and modulated photoluminescence, photoluminescence excitation, and photon correlation experiments. Optical writing of information in the spin state of the Mn ion has been demonstrated, using orientation of the Mn spin by spin-polarized carriers transferred from the neighbor quantum dot. Mn spin orientation time values from 20 ns to 100 ns were measured, depending on the excitation power. Storage time of the information in the Mn spin was found to be enhanced by application of a static magnetic field of 1 T, reaching hundreds of microseconds in the dark. Simple rate equation models were found to describe correctly static and dynamical properties of the system.Comment: 4 pages, 3 figure

Microphotoluminescence study of disorder in ferromagnetic (Cd,Mn)Te quantum well

Microphotoluminescence mapping experiments were performed on a modulation doped (Cd,Mn)Te quantum well exhibiting carrier induced ferromagnetism. The zero field splitting that reveals the presence of a spontaneous magnetization in the low-temperature phase, is measured locally; its fluctuations are compared to those of the spin content and of the carrier density, also measured spectroscopically in the same run. We show that the fluctuations of the carrier density are the main mechanism responsible for the fluctuations of the spontaneous magnetization in the ferromagnetic phase, while those of the Mn spin density have no detectable effect at this scale of observation.Comment: 4 pages, 3 figure

p-Type doping of II-VI heterostructures from surface states: application to ferromagnetic Cd1−x_{1-x}Mnx_xTe quantum wells

We present a study of p-type doping of CdTe and Cd$_{1-x}$Mn$_x$Te quantum wells from surface states. We show that this method is as efficient as usual modulation doping with nitrogen acceptors, and leads to hole densities exceeding $2 \times 10^{11}$ cm$^{-2}$. Surface doping was successfully applied to obtain carrier-induced ferromagnetism in a Cd$_{1-x}$Mn$_x$Te quantum well. The observed temperature dependence of photoluminescence spectra, and the critical temperature, correspond well to those previously reported for ferromagnetic quantum wells doped with nitrogen.Comment: 4 figure

Origin of the anomalous magnetic circular dichroism spectral shape in ferromagnetic (Ga,Mn)As: Impurity bands inside the band gap

The electronic structure of a prototype dilute magnetic semiconductor (DMS), Ga1-xMnxAs, is studied by magnetic circular dichroism (MCD) spectroscopy. We prove that the optical transitions originated from impurity bands cause the strong positive MCD background. The MCD signal due to the E0 transition from the valence band to the conduction band is negative indicating that the p-d exchange interactions between the p-carriers and d-spin is antiferromagnetic. The negative E0 MCD signal also indicates that the hole-doping of the valence band is not so large as previously assumed. The impurity bands seem to play important roles for the ferromagnetism of Ga1-xMnxAs.Comment: 13 pages, 3 figure

Femtosecond study of the interplay between excitons, trions, and carriers in (Cd,Mn)Te quantum wells

We present an absorption study of the neutral and positively charged exciton (trion) under the influence of a femtosecond, circularly polarized, resonant pump pulse. Three populations are involved: free holes, excitons, and trions, all exhibiting transient spin polarization. In particular, a polarization of the hole gas is created by the formation of trions. The evolution of these populations is studied, including the spin flip and trion formation processes. The contributions of several mechanisms to intensity changes are evaluated, including phase space filling and spin-dependent screening. We propose a new explanation of the oscillator strength stealing phenomena observed in p-doped quantum wells, based on the screening of neutral excitons by charge carriers. We have also found that binding heavy holes into charged excitons excludes them from the interaction with the rest of the system, so that oscillator strength stealing is partially blockedComment: 4 pages, 4 figure

Excitonic giant Zeeman effect in GaN:Mn^3+

We describe a direct observation of the excitonic giant Zeeman splitting in (Ga,Mn)N, a wide-gap III-V diluted magnetic semiconductor. Reflectivity and absorption spectra measured at low temperatures display the A and B excitons, with a shift under magnetic field due to s,p-d exchange interactions. Using an excitonic model, we determine the difference of exchange integrals between Mn^3+ and free carriers in GaN, N_0(alpha-beta)=-1.2 +/- 0.2 eV. Assuming a reasonable value of alpha, this implies a positive sign of beta which corresponds to a rarely observed ferromagnetic interaction between the magnetic ions and the holes.Comment: 4 pages, 4 figure