Layer-Dependent Charge State Lifetime of Single Se Vacancies in WSe2_2

Defect engineering in two-dimensional semiconductors has been exploited to tune the optoelectronic properties and introduce new quantum states in the band gap. Chalcogen vacancies in transition metal dichalcogenides in particular have been found to strongly impact charge carrier concentration and mobility in 2D transistors as well as feature sub-gap emission and single-photon response. In this letter, we investigate the layer-dependent charge state lifetime of Se vacancies in WSe$_2$. In one monolayer WSe$_2$, we observe ultrafast charge transfer from the lowest unoccupied orbital of the top Se vacancy to the graphene substrate within (1.0 $\pm$ 0.2) ps measured via the current saturation in scanning tunneling approach curves. For Se vacancies decoupled by TMD multilayers, we find a sub-exponential increase of the charge lifetime from (62 $\pm$ 14) ps in bilayer to few nanoseconds in four-layer WSe$_2$, alongside a reduction of the defect state binding energy. Additionally, we attribute the continuous suppression and energy shift of the dI/dV in-gap defect state resonances at very close tip--sample distances to a current saturation effect. Our results provide a key measure of the layer-dependent charge transfer rate of chalcogen vacancies in TMDs

Direct observation of layer skyrmions in twisted WSe2 bilayers

Transition metal dichalcogenide (TMD) twisted homobilayers have been established as an ideal platform for studying strong correlation phenomena, as exemplified by the recent discovery of fractional Chern insulator (FCI) states in twisted MoTe2 and Chern insulators (CI) and unconventional superconductivity in twisted WSe2. In these systems, nontrivial topology in the strongly layer-hybridized regime can arise from a spatial patterning of interlayer tunneling amplitudes and layer-dependent potentials that yields a lattice of layer skyrmions. Here we report the direct observation of skyrmion textures in the layer degree of freedom of Rhombohedral-stacked (R-stacked) twisted WSe2 homobilayers. This observation is based on scanning tunneling spectroscopy that separately resolves the {\Gamma}-valley and K-valley moir\'e electronic states. We show that {\Gamma}-valley states are subjected to a moir\'e potential with an amplitude of ~ 120 meV. At ~150 meV above the {\Gamma}-valley, the K-valley states are subjected to a weaker moir\'e potential of ~30 meV. Most significantly, we reveal opposite layer polarization of the K-valley at the MX and XM sites within the moir\'e unit cell, confirming the theoretically predicted skyrmion layer-texture. The dI/dV mappings allow the parameters that enter the continuum model for the description of moir\'e bands in twisted TMD bilayers to be determined experimentally, further establishing a direct correlation between the shape of LDOS profile in real space and topology of topmost moir\'e band

Identification of RIP1 kinase as a specific cellular target of necrostatins

Necroptosis is a cellular mechanism of necrotic cell death induced by apoptotic stimuli in the form of death domain receptor engagement by their respective ligands under conditions where apoptotic execution is prevented. Although it occurs under regulated conditions, necroptotic cell death is characterized by the same morphological features as unregulated necrotic death. Here we report that necrostatin-1, a previously identified small-molecule inhibitor of necroptosis, is a selective allosteric inhibitor of the death domain receptor–associated adaptor kinase RIP1 in vitro. We show that RIP1 is the primary cellular target responsible for the antinecroptosis activity of necrostatin-1. In addition, we show that two other necrostatins, necrostatin-3 and necrostatin-5, also target the RIP1 kinase step in the necroptosis pathway, but through mechanisms distinct from that of necrostatin-1. Overall, our data establish necrostatins as the first-in-class inhibitors of RIP1 kinase, the key upstream kinase involved in the activation of necroptosis

Emergent Spin Phenomena in Air-Stable, Atomically Thin Lead

A stable platform to synthesize ultrathin heavy metals, with a strong interfacial Rashba effect, could lead to high efficiency charge-to-spin conversion for next-generation spintronics. Here we report wafer-scale synthesis of air-stable, epitaxially registered monolayer Pb on SiC (0001) via confinement heteroepitaxy (CHet). The highly asymmetric interfacial bonding in this heavy metal system lends to strong Rashba spin-orbit coupling near the Fermi level. Additionally, the system's air stability enables ex-situ spin torque ferromagnetic resonance (ST-FMR) measurements that demonstrate charge-to-spin conversion in CHet-based 2D-Pb/ferromagnet heterostructures and a 1.5x increase in the effective field ratio compared to control samples.Comment: 17 pages, 4 figures. Supporting Information included (20 pages, 9 figures, 1 table

Confined monolayer Ag as a large gap 2D semiconductor and its momentum resolved excited states

2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their potential applications but also for exotic quantum effects such as superconductivity. By mapping momentum-resolved electronic states using time-resolved and angle-resolved photoemission spectroscopy (ARPES), we reveal that monolayer Ag confined between bilayer graphene and SiC is a large gap (> 1 eV) 2D semiconductor, consistent with GW-corrected density functional theory. The measured valence band dispersion matches the DFT-GW quasiparticle band. However, the conduction band dispersion shows an anomalously large effective mass of 2.4 m0. Possible mechanisms for this large enhancement in the “apparent mass” are discussed.This work was primarily supported by the National Science Foundation through the Center for Dynamics and Control of Materials: an NSF MRSEC under Cooperative Agreement No. DMR- 1720595. Other supports include NSF Grant Nos. DMR-1808751, and the Welch Foundation F- 1672. Support for synthesis comes from The Penn State Center for Nanoscale Science (NSF Grant DMR-2011839) and the Penn State 2DCC-MIP (NSF DMR-1539916).Center for Dynamics and Control of Material

Association between actual weight status, perceived weight and depressive, anxious symptoms in Chinese adolescents: a cross-sectional study

<p>Abstract</p> <p>Backgroud</p> <p>The purpose of this study was to describe actual measured weight and perceived weight and to explore associations with depressive, anxiety symptoms in school adolescents in China.</p> <p>Methods</p> <p>A sample of 1144 Chinese adolescents was randomly selected from four schools in Wuhan, China, including 665 boys and 479 girls with ages ranging between 10 and 17 years. Actual measured weight and height and perceived weight status were compared to anxiety and depressive symptoms measured using the revised Self-Rating Anxiety Scale and Children's Depression Inventory. A general linear model was used to compare differences in psychological symptoms among the teenagers with different measured and perceived weights.</p> <p>Results</p> <p>When compared with standardized weight tables (WHO age- and gender-specific body mass index (BMI) cutoffs (2007 reference)), girls were more likely to misperceive themselves as overweight, whereas more boys misclassified their weight status as underweight. The adolescents who perceived themselves as overweight were more likely to experience depressive and anxiety symptoms (except girls) than those who perceived themselves as normal and/or underweight. However, no significant association was found between depressive and anxiety symptoms actual measured weight status.</p> <p>Conclusions</p> <p>Perceived weight status, but not the actual weight status, was associated with psychological symptoms.</p