Dependence of nonlocal Gilbert damping on the ferromagnetic layer type in FM/Cu/Pt heterostructures

We have measured the size effect in nonlocal Gilbert relaxation rate in FM(t$_{FM}$) / Cu (5nm) [/ Pt (2nm)] / Al(2nm) heterostructures, FM = \{ Ni$_{81}$Fe$_{19}$, Co$_{60}$Fe$_{20}$B$_{20}$, pure Co\}. Common behavior is observed for three FM layers, where the additional relaxation obeys both a strict inverse power law dependence $\Delta G =K \:t^{n}$, $n=-\textrm{1.04}\pm\textrm{0.06}$ and a similar magnitude $K=\textrm{224}\pm\textrm{40 Mhz}\cdot\textrm{nm}$. As the tested FM layers span an order of magnitude in spin diffusion length $\lambda_{SDL}$, the results are in support of spin diffusion, rather than nonlocal resistivity, as the origin of the effect

High domain wall velocities induced by current in ultrathin Pt/Co/AlOx wires with perpendicular magnetic anisotropy

Current-induced domain wall (DW) displacements in an array of ultrathin Pt/Co/AlOx wires with perpendicular magnetic anisotropy have been directly observed by wide field Kerr microscopy. DWs in all wires in the array were driven simultaneously and their displacement on the micrometer-scale was controlled by the current pulse amplitude and duration. At the lower current densities where DW displacements were observed (j less than or equal to 1.5 x 10^12 A/m^2), the DW motion obeys a creep law. At higher current density (j = 1.8 x 10^12 A/m^2), zero-field average DW velocities up to 130 +/- 10 m/s were recorded.Comment: Minor changes to Fig. 1(b) and text, correcting for the fact that domain walls were subsequently found to move counter to the electron flow. References update

Electric-field control of domain wall nucleation and pinning in a metallic ferromagnet

The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to be particularly sensitive to the influence of an E-field due to the interfacial origin of their anisotropy. In these systems, E-field effects have been recently applied to assist magnetization switching and control domain wall (DW) velocity. Here we report on two new applications of the E-field in a similar material : controlling DW nucleation and stopping DW propagation at the edge of the electrode

Spin injection in Silicon at zero magnetic field

In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through an alumina tunnel barrier from a Co/Pt thin film exhibiting a strong out-of-plane anisotropy. The electrons spin polarization is then analysed through the circular polarization of emitted light. All the light polarization measurements are performed without an external applied magnetic field \textit{i.e.} in remanent magnetic states. The light polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the Co/Pt injector. We could achieve a circular polarization degree of the emitted light of 3 % at 5 K. Moreover this light polarization remains almost constant at least up to 200 K.Comment: accepted in AP