1,189 research outputs found
Giant Magneto-Oscillations of Electric-Field-Induced Spin Polarization in 2DEG
We consider a disordered two-dimensional electron gas with spin-orbit
coupling placed in a perpendicular magnetic field and calculate the magnitude
and direction of the electric-field-induced spin polarization. We find that in
strong magnetic fields the polarization becomes an oscillatory function of the
magnetic field and that the amplitude of these oscillations is parametrically
larger than the polarization at zero magnetic field. We show that the enhanced
amplitude of the polarization is a consequence of strong electron-hole
asymmetry in a quantizing magnetic field.Comment: 6 pages, 3 figure
Highly polarized injection luminescence in forward-biased ferromagnetic-semiconductor junctions at low spin polarization of current
We consider electron tunneling from a nonmagnetic -type semiconductor
(-S) into a ferromagnet (FM) through a very thin forward-biased Schottky
barrier resulting in efficient extraction of electron spin from a thin -S
layer near FM-S interface at low spin polarization of the current. We show that
this effect can be used for an efficient polarization radiation source in a
heterostructure where the accumulated spin polarized electrons are injected
from -S and recombine with holes in a quantum well. The radiation
polarization depends on a bias voltage applied to the FM-S junction.Comment: 4 pages, 2 figure
New Origin For Spin Current And Current-Induced Spin Precession In Magnetic Multilayers
In metallic ferromagnets, an electric current is accompanied by a flux of
angula r momentum, also called spin current. In multilayers, spatial variations
of the spin current correspond to drive torques exerted on a magnetic layer.
These torq ues result in spin precession above a certain current threshold. The
usual kind of spin current is associated with translation of the spin-up and
spin-down Ferm i surfaces in momentum space. We discuss a different kind of
spin current, assoc iated with expansion and contraction of the Fermi surfaces.
It is more nonlocal in nature, and may exist even in locations where the
electrical current density is zero. It is larger than the usual spin current,
in a ratio of 10 or 100, and is dominant in most cases. The new spin current is
proportional to the differenc e Delta-mu = 0.001 eV between spin-up and
spin-down Fermi levels, averaged over the entire Fermi surface. Conduction
processes, spin relaxation, and spin-wave emission in the multilayer can be
described by an equivalent electrical circuit resembling an unbalanced dc
Wheatstone bridge. And Delta-mu corresponds to the output voltage of the
bridge.Comment: 5 pages, 3 figures. To appear in J. Appl. Phys., vol. 89, May 15,
200
Geometrical effects on spin injection: 3D spin drift diffusion model
We discuss a three-dimensional (3D) spin drift diffusion (SDD) model to
inject spin from a ferromagnet (FM) to a normal metal (N) or semiconductor
(SC). Using this model we investigate the problem of spin injection into
isotropic materials like GaAs and study the effect of FM contact area and SC
thickness on spin injection. We find that in order to achieve detectable spin
injection a small contact area or thick SC samples are essential for direct
contact spin injection devices. We investigate the use of thin metal films (Cu)
proposed by S.B. Kumar et al. and show that they are an excellent substitute
for tunnelling barriers (TB) in the regime of small contact area. Since most
tunnelling barriers are prone to pinhole defects, we study the effect of
pinholes in AlO tunnelling barriers and show that the reduction in the
spin-injection ratio () is solely due to the effective area of the
pinholes and there is no correlation between the number of pinholes and the
spin injection ratio.Comment: 5 pages, 6 figures. Accepted by JA
High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins
New mechanism of magnetoresistance, based on tunneling-emission of spin
polarized electrons from ferromagnets (FM) into semiconductors (S) and
precession of electron spin in the semiconductor layer under external magnetic
field, is described. The FM-S-FM structure is considered, which includes very
thin heavily doped (delta-doped) layers at FM-S interfaces. At certain
parameters the structure is highly sensitive at room-temperature to variations
of the field with frequencies up to 100 GHz. The current oscillates with the
field, and its relative amplitude is determined only by the spin polarizations
of FM-S junctions at relatively large bias voltage.Comment: 5 pages, 2 figures, (v2) new plot with a dependence of current J on
magnetic field H added in Fig.2 (top panel), minor amendments in the text;
(v3) minor typos corrected. To appear in Phys. Rev. Letter
Complete spin polarization of electrons in semiconductor layers and quantum dots
We demonstrate that non-equilibrium electrons in thin nonmagnetic
semiconductor layers or quantum dots can be fully spin polarized by means of
simultaneous electrical spin injection and extraction. The complete spin
polarization is achieved if the thin layers or quantum dots are placed between
two ferromagnetic metal contacts with moderate spin injection coefficients and
antiparallel magnetizations. The sign of the spin polarization is determined by
the direction of the current. Aplications of this effect in spintronics and
quantum information processing are discussed
Spin magnetotransport in two-dimensional hole systems
Spin current of two-dimensional holes occupying the ground-state subband in
an asymmetric quantum well and interacting with static disorder potential is
calculated in the presence of a weak magnetic field H perpendicular to the well
plane. Both spin-orbit coupling and Zeeman coupling are taken into account. It
is shown that the applied electric field excites both the transverse
(spin-Hall) and diagonal spin currents, the latter changes its sign at a finite
H and becomes greater than the spin-Hall current as H increases. The effective
spin-Hall conductivity introduced to describe the spin response in Hall bars is
considerably enhanced by the magnetic field in the case of weak disorder and
demonstrates a non-monotonic dependence on H.Comment: 4 pages, 2 figures, published in Phys. Rev.
AC Josephson Effect Induced by Spin Injection
Pure spin currents can be injected and detected in conductors via
ferromagnetic contacts. We consider the case when the conductors become
superconducting. A DC pure spin current flowing in one superconducting wire
towards another superconductor via a ferromagnet contact induces AC voltage
oscillations caused by Josephson tunneling of condensate electrons.
Quasiparticles simultaneously counterflow resulting in zero total electric
current through the contact. The Josephson oscillations can be accompanied by
Carlson-Goldman collective modes leading to a resonance in the voltage
oscillation amplitude.Comment: 5 page
Triplet supercurrent in ferromagnetic Josephson junctions by spin injection
We show that injecting nonequilibrium spins into the superconducting leads
strongly enhances the stationary Josephson current through a
superconductor-ferromagnet-superconductor junction. The resulting long-range
super-current through a ferromagnet is carried by triplet Cooper pairs that are
formed in s-wave superconductors by the combined effects of spin injection and
exchange interaction. We quantify the exchange interaction in terms of Landau
Fermi-liquid factors. The magnitude and direction of the long-range Josephson
current can be manipulated by varying the angles of the injected polarizations
with respect to the magnetization in the ferromagnet
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