Ärztinnen in der Orthopädie und Unfallchirurgie in Deutschland: ein aktueller Status quo

BACKGROUND: Gender-specific differences in the workplace in general and in the field of orthopedics and trauma surgery in particular are still clearly identifiable, and are becoming more and more pronounced in the social consciousness. OBJECTIVE: Analysis of the gender-specific development in the specialist field of orthopedics and trauma surgery in Germany over the past 15 years and a survey of the status quo. METHODS: Assessment of the development of female graduates in the study of human medicine, the proportion of women in accredited and clinical care and the gender-specific acquisition of an additional orthopedic/trauma surgical title. Evaluation of gender-specific numbers of members or participants in the relevant professional associations and the largest German conferences on orthopedics and trauma surgery, as well as the habilitation figures in the field of orthopedics. RESULTS AND DISCUSSION: The proportion of female doctors in various fields of orthopedics and trauma surgery in the clinic and in science is increasing. There is still a clear discrepancy in leading positions in clinics, in the acquisition of an additional title, and on the boards of professional associations. In some fields, such as pediatric and hand/foot/ankle surgery, the proportion of women is higher than in other sub-areas of orthopedics and trauma surgery

Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy

The accumulation of oxygen at GaAs/AlGaAs interfacesgrown by molecular beam epitaxy has been established by secondary ion mass spectrometry profiling of GaAs/AlGaAs multilayerstructures. An enhanced oxygen peak was observed at the boundary between GaAs and Al x Ga1−x As layers with x=0.35 and x=1 when the binary layer is deposited on top of the ternary layer. The segregation of oxygen may be a contributing factor responsible for the lower luminescence reported in the first GaAs well of multilayerquantum wellstructures and for the difference between normal and inverted interface high electron mobility devices