Monte Carlo Treatment of Non-Equilibrium Processes in n-Type InSb Crystals

Numerical calculation by Monte Carlo method of the dynamic behaviour of electron ensemble in n-type InSb crystals after step-like application of electric field is presented. The results show essential influence of electron density on the energy relaxation time. The effect of electron energy cooling below equilibrium temperature in compensated n-InSb is obtained numerically for the first time, which is in agreement with experimental results

A Method for Measuring the Specific Electrical Conductivity of an Anisotropically Conductive Medium

This find is registered at Portable Antiquities of the Netherlands with number PAN-0006028

Hot-Electron Effects in High-Resistivity InSb

We report that in the presence of random potential of the conduction band hot-electron transport can exhibit some novel features, some of which can be observed in dependencies of electric conductivity, mean electron energy and noise temperature on electric field strength

Applicable Damage of High-TcT_{c} YbaCuO Superconducting Tapes by Current and Laser Pulses

Damage and irreversible damage of YBaCuO tapes with high density current after switching from superconducting to normal state are investigated. Quasi-homogeneous current distribution across the tape in superconducting state can cause perfect tape damage or irreversible damage when current is slightly above critical value. The model of the tape heating during the optically initiated switching from superconducting to normal state is proposed. Analysis of causes inducing damage shows necessity to consider $0.5T_{m}$ damage criterion because of strong current influence on the damage processes. Possible damage mechanisms are described and crack tips motion simultaneously with switching from superconducting to normal state is considered. Application of optically illuminated YBaCuO tapes with nanosecond duration current pulses on the base of the described mechanisms is proposed

Submicrometric Heavily Doped n-GaAs Structures for Microwave Detection

Strong coupling between electrons and phonons in heavily doped semiconductors impedes, in general, investigation of hot carrier phenomena in the material. Investigations of hot electron electromotive force arising in symmetrically and asymmetrically shaped structures of heavily doped n-GaAs under microwave radiation are presented in this paper. Mesas of MBE grown n-GaAs layers with neck shaped down to submicron dimensions revealed strong dependence of voltage sensitivity of the structure on the size of the neck. Slight frequency dependence of voltage sensitivity of the microwave diodes with both symmetrically and asymmetrically shaped n-n$\text{}^{+}$ junctions was observed experimentally in K$\text{}_{a}$ frequency range, which coincides well with theoretical predictions