252 research outputs found
One-dimensional semirelativity for electrons in carbon nanotubes
It is shown that the band structure of single-wall semiconducting carbon
nanotubes (CNT) is analogous to relativistic description of electrons in
vacuum, with the maximum velocity = cm/s replacing the light velocity.
One-dimensional semirelativistic kinematics and dynamics of electrons in CNT is
formulated. Two-band k.p Hamiltonian is employed to demonstrate that electrons
in CNT experience a Zitterbewegung (trembling motion) in absence of external
fields. This Zitterbewegung should be observable much more easily in CNT than
its analogue for free relativistic electrons in vacuum.Comment: 4 pages no figure
The visibility study of S-T Landau-Zener-St\"uckelberg oscillations without applied initialization
Probabilities deduced from quantum information studies are usually based on
averaging many identical experiments separated by an initialization step. Such
initialization steps become experimentally more challenging to implement as the
complexity of quantum circuits increases. To better understand the consequences
of imperfect initialization on the deduced probabilities, we study the effect
of not initializing the system between measurements. For this we utilize
Landau-Zener-St\"uckelberg oscillations in a double quantum dot circuit.
Experimental results are successfully compared to theoretical simulations.Comment: 8 pages, 5 figure
Enhanced charge detection of spin qubit readout via an intermediate state
We employ an intermediate excited charge state of a lateral quantum dot
device to increase the charge detection contrast during the qubit state readout
procedure, allowing us to increase the visibility of coherent qubit
oscillations. This approach amplifies the coherent oscillation magnitude but
has no effect on the detector noise resulting in an increase in the signal to
noise ratio. In this letter we apply this scheme to demonstrate a significant
enhancement of the fringe contrast of coherent Landau-Zener-Stuckleberg
oscillations between singlet S and triplet T+ two-spin states.Comment: 3 pages, 3 figure
The Addition Spectrum of a Lateral Dot from Coulomb and Spin Blockade Spectroscopy
Transport measurements are presented on a class of electrostatically defined
lateral dots within a high mobility two dimensional electron gas (2DEG). The
new design allows Coulomb Blockade(CB) measurements to be performed on a single
lateral dot containing 0, 1 to over 50 electrons. The CB measurements are
enhanced by the spin polarized injection from and into 2DEG magnetic edge
states. This combines the measurement of charge with the measurement of spin
through spin blockade spectroscopy. The results of Coulomb and spin blockade
spectroscopy for first 45 electrons enable us to construct the addition
spectrum of a lateral device. We also demonstrate that a lateral dot containing
a single electron is an effective local probe of a 2DEG edge.Comment: 4 pages, 4 figures submitted to Physical Review
Temperature dependence of the electron spin g factor in GaAs
The temperature dependence of the electron spin factor in GaAs is
investigated experimentally and theoretically. Experimentally, the factor
was measured using time-resolved Faraday rotation due to Larmor precession of
electron spins in the temperature range between 4.5 K and 190 K. The experiment
shows an almost linear increase of the value with the temperature. This
result is in good agreement with other measurements based on photoluminescence
quantum beats and time-resolved Kerr rotation up to room temperature. The
experimental data are described theoretically taking into account a diminishing
fundamental energy gap in GaAs due to lattice thermal dilatation and
nonparabolicity of the conduction band calculated using a five-level kp model.
At higher temperatures electrons populate higher Landau levels and the average
factor is obtained from a summation over many levels. A very good
description of the experimental data is obtained indicating that the observed
increase of the spin factor with the temperature is predominantly due to
band's nonparabolicity.Comment: 6 pages 4 figure
Bipolar spin blockade and coherent state superpositions in a triple quantum dot
Spin qubits based on interacting spins in double quantum dots have been
successfully demonstrated. Readout of the qubit state involves a conversion of
spin to charge information, universally achieved by taking advantage of a spin
blockade phenomenon resulting from Pauli's exclusion principle. The archetypal
spin blockade transport signature in double quantum dots takes the form of a
rectified current. Currently more complex spin qubit circuits including triple
quantum dots are being developed. Here we show both experimentally and
theoretically (a) that in a linear triple quantum dot circuit, the spin
blockade becomes bipolar with current strongly suppressed in both bias
directions and (b) that a new quantum coherent mechanism becomes relevant.
Within this mechanism charge is transferred non-intuitively via coherent states
from one end of the linear triple dot circuit to the other without involving
the centre site. Our results have implications in future complex
nano-spintronic circuits.Comment: 21 pages, 7 figure
Quantum interference and phonon-mediated back-action in lateral quantum dot circuits
Spin qubits have been successfully realized in electrostatically defined,
lateral few-electron quantum dot circuits. Qubit readout typically involves
spin to charge information conversion, followed by a charge measurement made
using a nearby biased quantum point contact. It is critical to understand the
back-action disturbances resulting from such a measurement approach. Previous
studies have indicated that quantum point contact detectors emit phonons which
are then absorbed by nearby qubits. We report here the observation of a
pronounced back-action effect in multiple dot circuits where the absorption of
detector-generated phonons is strongly modified by a quantum interference
effect, and show that the phenomenon is well described by a theory
incorporating both the quantum point contact and coherent phonon absorption.
Our combined experimental and theoretical results suggest strategies to
suppress back-action during the qubit readout procedure.Comment: 25 pages, 8 figure
Coulomb and Spin blockade of two few-electrons quantum dots in series in the co-tunneling regime
We present Coulomb Blockade measurements of two few-electron quantum dots in
series which are configured such that the electrochemical potential of one of
the two dots is aligned with spin-selective leads. The charge transfer through
the system requires co-tunneling through the second dot which is in
resonance with the leads. The observed amplitude modulation of the resulting
current is found to reflect spin blockade events occurring through either of
the two dots. We also confirm that charge redistribution events occurring in
the off-resonance dot are detected indirectly via changes in the
electrochemical potential of the aligned dot.Comment: 6 pages, 5 figures, submitted to Phys. Rev.
The origin of switching noise in GaAs/AlGaAs lateral gated devices
We have studied the origin of switching (telegraph) noise at low temperature
in lateral quantum structures defined electrostatically in GaAs/AlGaAs
heterostructures by surface gates. The noise was measured by monitoring the
conductance fluctuations around on the first step of a quantum point
contact at around 1.2 K. Cooling with a positive bias on the gates dramatically
reduces this noise, while an asymmetric bias exacerbates it. We propose a model
in which the noise originates from a leakage current of electrons that tunnel
through the Schottky barrier under the gate into the doped layer. The key to
reducing noise is to keep this barrier opaque under experimental conditions.
Bias cooling reduces the density of ionized donors, which builds in an
effective negative gate voltage. A smaller negative bias is therefore needed to
reach the desired operating point. This suppresses tunnelling from the gate and
hence the noise. The reduction in the density of ionized donors also
strengthens the barrier to tunneling at a given applied voltage. Support for
the model comes from our direct observation of the leakage current into a
closed quantum dot, around for this device. The current
was detected by a neighboring quantum point contact, which showed monotonic
steps in time associated with the tunneling of single electrons into the dot.
If asymmetric gate voltages are applied, our model suggests that the noise will
increase as a consequence of the more negative gate voltage applied to one of
the gates to maintain the same device conductance. We observe exactly this
behaviour in our experiments.Comment: 8 pages, 7 figure
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