The Influence of Material Property on the DEFORM of Cold Rolled and Galvanized Steel for Automotive Outer Panels

Maste

Evaluation of minimum depth of soil cover and reinforcement of soil cover above soil-steel bridge

In this paper, the results of the numerical analysis for the minimum depth of soil cover have been compared with those of currently suggested codes. Based on this comparoson, the minimum depth of soil cover for the structures with long spans was suggested. Results showed that the actual depth of the soil cover required against soil failure over a circular and low-profile arch structure does not vary significantyl with the size of the span and for the circular structure, the minimum depth of the soil cover was about 1.5m, and for the low-profile arch structures, below about 1.6m. And the previously established code in which the minimum depth of soil cover is defined to linearly increase with the increase inthe span(CHBDC, 2001)was very conservative. For the structure with the relieving slab. the maximum live load thrust was reduced by about 36 percent and the maximum moment about 81 percent. The numerical analysis gave more conservative estimation of the live-load thrusts than the other design methods

Selective Growth and Robust Valley Polarization of Bilayer 3R-MoS2

It turns out that as-grown bilayers are predominantly 3R-type, not more common 2H-type, as verified by microscopic and spectroscopic characterizations. As expected, 3R bilayer showed a significantly higher valley polarization compared with centrosymmetric 2H bilayer, which undergoes efficient interlayer scattering across contrasting valleys because of their vertical alignment of the K and K^' points in momentum space. Interestingly, 3R bilayer showed even higher valley polarization compared with the monolayer counterpart. Moreover, 3R bilayer reasonably maintained its valley efficiency over a very wide range of excitation power density from ~0.16 kW/cm2 to ~0.16 MW/cm2 at both low and room temperatures. These observations are rather surprising, because valley dephasing could be more efficient in the bilayer via both interlayer and intralayer scatterings, whereas only intralayer scattering is allowed in monolayer. The improved valley polarization of 3R bilayer can be attributed to its indirect-gap nature, where valley-polarized excitons can relax into the valley-insensitive band edge, which otherwise scatter into the contrasting valley to effectively cancel out the initial valley polarization. Our results provide a facile route for the growth of 3R-MoS2 bilayers that could be utilized as a platform for advancing valleytronic